TITLE

Relaxation of strain within multilayer InGaAs/GaAs pseudomorphic structures

AUTHOR(S)
Grey, R.; David, J. P. R.; Claxton, P. A.; Gonzalez Sanz, F.; Woodhead, J.
PUB. DATE
July 1989
SOURCE
Journal of Applied Physics;7/15/1989, Vol. 66 Issue 2, p975
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Reports on strained-layer superlattice (SLS) structures grown in InGaAs/GaAs with various gallium arsenide barrier layer thicknesses. Number of SLS structures grown by molecular-beam epitaxy; Data on photoluminescence as a function of barrier thickness.
ACCESSION #
7631960

 

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