Properties of molecular-beam-epitaxy-grown and O+-implanted GaAs and their application to the formation of a buried collector of an AlGaAs/GaAs heterojunction bipolar transistor

Ota, Y.; Yanagihara, M.; Inada, M.
July 1988
Journal of Applied Physics;7/15/1988, Vol. 64 Issue 2, p926
Academic Journal
Investigates the changes in the properties of molecular-beam-epitaxy (MBE) grown gallium arsenide (GaAs) by oxygen-ion implantation and annealing. Crystalline influences of oxygen implantation on GaAs; Kinds of MBE-grown wafers that were used to study the conditions of the oxygen implantation; Device fabrication and performance.


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