TITLE

Molecular-beam-epitaxial growth and selected properties of GaAs layers and GaAs/(Al,Ga)As superlattices with the (211) orientation

AUTHOR(S)
Subbanna, Seshadri; Kroemer, Herbert; Merz, James L.
PUB. DATE
January 1986
SOURCE
Journal of Applied Physics;1/15/1986, Vol. 59 Issue 2, p488
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the molecular-beam-epitaxial growth and the properties of the gallium arsenide layers and gallium arsenid/(aluminum, gallium) arsenide superlattices with the (211) A and (211) B orientations rather than (100) orientation. Comparison of the growth morphologies between the (211) orientations; Indication of the electron diffraction patterns taken during the growth; Behavior which reflects an incorporation mechanism.
ACCESSION #
7630235

 

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