TITLE

The effect of gate metal and SiO2 thickness on the generation of donor states at the Si-SiO2 interface

AUTHOR(S)
Fischetti, M. V.; Weinberg, Z. A.; Calise, J. A.
PUB. DATE
January 1985
SOURCE
Journal of Applied Physics;1/15/1985, Vol. 57 Issue 2, p418
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the effect of gate metal and silicon oxide thickness on the generation of donor states at the silicon-silicon oxide interface. Electron injection in silicon oxide; Effect of the gate metal during electron avalanche injection in metal-oxide-semiconductor capacitors; Quality of the metal-silicon oxide interfaces.
ACCESSION #
7630075

 

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