TITLE

Infrared photoionization of interface states in Cr-SiO2-(n,p)Si structures

AUTHOR(S)
Sharma, Umesh; Dahlke, Walter E.
PUB. DATE
February 1985
SOURCE
Journal of Applied Physics;2/15/1985, Vol. 57 Issue 4, p1186
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Discusses a study that measured and analyzed transient photocurrents caused by subband-gap illumination of n-and p-silicon metal-oxide-semiconductor structures. Optical measurements of the density of interface states and their electron and hole photoionization cross sections in n and p Silicon; Measurement of photocurrent transients; Photoionization parameters.
ACCESSION #
7628619

 

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