Effect of Doping and Post Annealing on PbI2 Photoconductivity

Mousa, Ali Moutesher; Jamil, Shatha Shamoon; Ponpon, Jean Pieer
February 2012
Journal of Materials Science & Engineering A;2012, Vol. 2 Issue 2, p215
Academic Journal
This paper proposed a study on the fabrication and characterization of photo detectors based on PbI2 layer deposited from solution. The characteristics of dark and photocurrent of the detectors were investigated. Particular attention has been given to the question of layer thickness, impurities addition and post deposition annealing, since these conditions are known to have a profound effect on the structure and electrical properties of the layers. Bulk photoconductive gain greater than 330 was observed, the gain is highest with undoped and annealed at 1,000 �C but decreases at higher doping and annealing temperature. The studies of thickness dependence of photoconductivity show that the conductivity ratio (optical gain) decreases sharply from 35 to 5 with increasing thickness from 8.8 �m to 12 �m.


Related Articles

  • Effect of heat treatment on the photoelectric properties of Si(Zn) photodetectors. Astrova, E. V.; Voronkov, V. B.; Lebedev, A. A.; Lodygin, A. N.; Remenyuk, A. D. // Semiconductors;Mar1999, Vol. 33 Issue 3, p359 

    It is established that the heat treatment of p-type silicon doped with zinc at a high concentration (N[sub Zn] ≈ 2 × 10[sup 16] cm³) in the temperature range 450-650 °C induces inhomogeneities of the electrical conductivity, which are detrimental to the stable operation of an...

  • The Role of the AIGaAs Doping Level on the Optical Gain of Two-Dimensional Electron Gas Photodetectors. Nabet, Bahram; Romero, Murilo A.; Cola, Adriano; Quaranta, Fabio // Journal of Electronic Materials;Feb2004, Vol. 33 Issue 2, p123 

    We compare the optical response of two modulation-doped heterojunction photodetectors with identical growth structure, differing only in the doping level of the wide band material. The larger photoresponse of the higher doped device cannot be explained as photoconductive gain because neither the...

  • Effect of nonstoichiometry and doping on the photoconductivity spectra of GeSe layered crystals. Bletskan, D. I.; Madyar, J. J.; Kabaciy, V. N. // Semiconductors;Feb2006, Vol. 40 Issue 2, p137 

    The polarization photoconductivity spectra of Bi-doped nonstoichiometric GeSe layered crystals grown by static sublimation were investigated. Two strongly polarized maxima at the photon energies hνmax = 1.35 eV ( E ∥ a) and 1.44 eV ( E∥ b) due to the V → V and Δ →...

  • On plasmon-induced photocurrent and doping of metal-patterned graphene. Hosseini, T.; Kouklin, N. A. // Applied Physics Letters;7/28/2014, Vol. 105 Issue 4, p1 

    Patterning graphene with noble metal plasmonic nanostructures to enhance and to manipulate the optical and electronic properties of graphene promises a variety of technological innovations in the field of nano-optoelectronics. In this report, we briefly revisit photoconduction experiments done...

  • Absorption and Photoconductivity of Boron-Compensated μc-Si:H. Kazanskiı, A. G.; Mell, H.; Terukov, E. I.; Forsh, P. A. // Semiconductors;Mar2000, Vol. 34 Issue 3, p367 

    A study is reported of absorption, conductivity, and photoconductivity of photosensitive μc-Si:H weakly doped with boron. The dependences of photoconductivity on the temperature and the intensity of light were measured in a temperature range of 100-400 K for photon energies of 0.9, 1.3, and...

  • Electrical transport between delta layers in silicon. Kiunke, W.; Hammerl, E.; Eisele, I.; Schulze, D.; Gobsch, G. // Journal of Applied Physics;10/15/1992, Vol. 72 Issue 8, p3602 

    Presents a study which investigated the electrical transport between locally-grown delta-doped layers in silicon. Growth and characterization of local delta layers; Electrical transport measurements in the double-delta devices; Mechanisms for the vertical electrical transport between two delta...

  • Photoconductive response of PbTe doping superlattices. Jantsch, W.; Lischka, K.; Eisenbeiss, A.; Pichler, P.; Clemens, H.; Bauer, G. // Applied Physics Letters;6/8/1987, Vol. 50 Issue 23, p1654 

    Doping superlattices made of PbTe exhibit excellent photoconductive response with a peak detectivity D*≥8×1010 cm Hz1/2 W-1, which is close to the theoretical limit at 6 μm wavelength. Lifetime and far-infrared magneto-optical investigations show that photogenerated electron-hole...

  • Photoelectric Properties of ZnO Films Doped with Cu and Ag Acceptor Impurities. Gruzintsev, A. N.; Volkov, V. T.; Yakimov, E. E. // Semiconductors;Mar2003, Vol. 37 Issue 3, p259 

    The influence exerted by doping with Cu and Ag acceptor impurities at a content of 1, 3, and 5 at. % on the luminescence and photoconductivity of zinc oxide films has been studied. Electron-beam evaporation in optimal modes has been used to obtain films with predominant luminescence in the UV...

  • Magnetron-sputtered amorphous silicon. Demichelis, F.; Tagliaferro, A.; Tresso, E.; Rava, P. // Journal of Applied Physics;6/15/1985, Vol. 57 Issue 12, p5424 

    Presents the results obtained on several SP undoped αSi:H films deposited at different temperatures of the substrate. Occurrence of the highest photoconductivity; Example of a transparent conductive film; Instrument used to measure the transmittance and reflectance spectra of the films.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics