TITLE

Effect of Doping and Post Annealing on PbI2 Photoconductivity

AUTHOR(S)
Mousa, Ali Moutesher; Jamil, Shatha Shamoon; Ponpon, Jean Pieer
PUB. DATE
February 2012
SOURCE
Journal of Materials Science & Engineering A;2012, Vol. 2 Issue 2, p215
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This paper proposed a study on the fabrication and characterization of photo detectors based on PbI2 layer deposited from solution. The characteristics of dark and photocurrent of the detectors were investigated. Particular attention has been given to the question of layer thickness, impurities addition and post deposition annealing, since these conditions are known to have a profound effect on the structure and electrical properties of the layers. Bulk photoconductive gain greater than 330 was observed, the gain is highest with undoped and annealed at 1,000 �C but decreases at higher doping and annealing temperature. The studies of thickness dependence of photoconductivity show that the conductivity ratio (optical gain) decreases sharply from 35 to 5 with increasing thickness from 8.8 �m to 12 �m.
ACCESSION #
76281989

 

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