TITLE

Defect generation in silicon-implanted gate insulators of insulated gate field-effect transistors

AUTHOR(S)
Sune, C. T.; Reisman, A.; Williams, C. K.
PUB. DATE
December 1989
SOURCE
Journal of Applied Physics;12/15/1989, Vol. 66 Issue 12, p5801
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents information on a study which investigated the effects on insulated gate field-effect transistor device characteristics due to implantation of silicon into the gate insulator. Devices used in the study; Transconductance of the devices as a function of the implantation energy of the silicon ions; Experimental procedures.
ACCESSION #
7627764

 

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