TITLE

Temperature dependence of the Γ8v-Γ6c gap of GaAs

AUTHOR(S)
Oelgart, G.; Orschel, B.; Proctor, M.; Martin, D.; Morier-Genoud, F.; Reinhart, F. K.
PUB. DATE
August 1993
SOURCE
Journal of Applied Physics;8/15/1993, Vol. 74 Issue 4, p2742
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents information on a study which determined the photoluminescence peak positions of the ground state heavy and light-hole excitons on high-quality molecular beam epitaxy grown GaAs/Al[subx]Ga[sub1-x]As multiquantum-well structures. Experimental details; Results and discussion; Conclusions.
ACCESSION #
7626963

 

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