TITLE

Temperature and impact ionization effects on fT of advanced bipolar transistors

AUTHOR(S)
Yuan, J. S.; Yeh, C. S.; Gadepally, B.
PUB. DATE
August 1991
SOURCE
Journal of Applied Physics;8/15/1991, Vol. 70 Issue 4, p2402
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a study which developed cutoff frequency modeling of the advanced bipolar transistors at avalanche breakdown. Details on the analytical equations developed; Examination of the process sensitivity of the collector charging time at the avalanche breakdown regime; Results of the study.
ACCESSION #
7626649

 

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