TITLE

High-resolution x-ray diffraction studies of InGaAs(P)/InP superlattices grown by gas-source molecular-beam epitaxy

AUTHOR(S)
Vandenberg, J. M.; Hamm, R. A.; Panish, M. B.; Temkin, H.
PUB. DATE
August 1987
SOURCE
Journal of Applied Physics;8/15/1987, Vol. 62 Issue 4, p1278
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Reports on high-resolution x-ray diffraction studies carried out to determine the structural perfection and periodicity of InGaAs(P)/indium phosphide (InP) superlattices grown by gas-source molecular-beam epitaxy. Explanation for the presence of sharp satellite reflections in the x-ray diffraction profiles; Characterization of InGaAs/InP superlattices grown on indium phosphide; Function of double-crystal x-ray diffractometry.
ACCESSION #
7626379

 

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