Ultrafast optical response originating from carrier-transport processes in undoped GaAs/n-type GaAs epitaxial structures

Hasegawa, Takayuki; Takagi, Yoshihiro; Takeuchi, Hideo; Yamada, Hisashi; Hata, Masahiko; Nakayama, Masaaki
May 2012
Applied Physics Letters;5/21/2012, Vol. 100 Issue 21, p211902
Academic Journal
We have investigated ultrafast optical responses of undoped GaAs/n-type GaAs (i-GaAs/n-GaAs) epitaxial structures at room temperature using a reflection-type pump-probe technique. The built-in electric field in the i-GaAs layer is controlled by its thickness. It is found that the decay time of a photoexcitation-induced reflectivity change in a sub-picosecond range decreases with an increase in the built-in electric field strength. The observed optical response is related to the transport process of photogenerated carriers from the i-GaAs layer to the n-GaAs layer. The shortest response time about 60 fs demonstrates that the i-GaAs/n-GaAs structure is useful for ultrafast optical applications.


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