Characteristics of ZrO[sub 2] gate dielectric deposited using Zr t–butoxide and Zr(NEt[sub 2])[sub 4] precursors by plasma enhanced atomic layer deposition method

Kim, Yangdo; Koo, Jaehyoung; Han, Jiwoong; Choi, Sungwoo; Jeon, Hyeongtag; Park, Chan-Gyung
November 2002
Journal of Applied Physics;11/1/2002, Vol. 92 Issue 9, p5443
Academic Journal
Scaling down of the microelectronic devices feature size is demanding high-quality ultra thin high-k gate dielectric as a potential replacement for SiO[SUB2] gate dielectric. Among the high-k materials, ZrO[SUB2] is considered as a potential alternative to SiO[SUB2] gate dielectric below 2 nm due to its thermodynamical stability as well as excellent electrical properties. For these reasons, we investigated ZrO[SUB2] films prepared by the normal atomic layer deposition (ALD) and plasma enhanced ALD (PEALD) techniques using Zr t-butoxide and Zr(NEt[SUB2])[SUB4] metal organic precursors. This study showed that ZrO[SUB2] films deposited by the PEALD method showed generally improved film qualities with relatively low-leakage current, negligible hysteresis, and low-carbon incorporation compared to those of the films deposited by the conventional ALD method. Also, ZrO[SUB2] films deposited using Zr(NEt[SUB2])[SUB4] precursor showed better film qualities than those of films deposited using Zr t-butoxide. Especially, ZrO[SUB2] films deposited using Zr(NEt[SUB2])[SUB4] with oxygen plasma showed the leakage current as low as about 2.5 × 10[SUP-9] A/cm[SUP2] with an equivalent oxide thickness value of about 1.4 nm. This study demonstrated the possible application of the PEALD technique for the high-quality ultra thin high-k gate dielectric film deposition.


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