TITLE

Local micro-photoreflectance spectroscopy measurements on type II InGaAlAs/GaAsSb/InP heterojunction bipolar transistor: Correlation with electrical characteristics

AUTHOR(S)
Chouaib, H.; Bru-Chevallier, C.
PUB. DATE
April 2012
SOURCE
Applied Physics Letters;4/23/2012, Vol. 100 Issue 17, p172102
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Micro-photoreflectance (micro-PR) is performed on patterned type II InGaAlAs/GaAsSb/InP heterojunction bipolar transistor to locally measure the built-in electric fields. The results show that the efficiency of the electric field modulation correlates with the ideality factor extracted from the electrical characteristics (Gummel characteristics). The Franz-Keldysh oscillations (FKO) completely disappear at the emitter/base heterojunction on devices with high ideality factor (nearly 2), whereas typical FKO spectra are seen on samples with ideality factor ∼1. Such behavior is attributed to the type II recombination across the InGaAlAs/GaAsSb interface which can reduce the photovoltage effect. Prior to the micro-PR experiments, photoluminescence is performed to demonstrate that the InGaAlAs/GaAsSb interface nature is of type II as well as to estimate the band offset discontinuity ΔEC.
ACCESSION #
74637421

 

Related Articles

  • Planar PbS quantum dot/C60 heterojunction photovoltaic devices with 5.2% power conversion efficiency. Klem, E. J. D.; Gregory, C. W.; Cunningham, G. B.; Hall, S.; Temple, D. S.; Lewis, J. S. // Applied Physics Letters;4/23/2012, Vol. 100 Issue 17, p173109 

    Of interest for both photovoltaic and photodetector applications is the ability of colloidal quantum dot (CQD) devices to provide response further into the infrared than is typical for other solution-processable materials. Here, we present a simple heterojunction diode structure that utilizes...

  • Improvement of GaAsSb alloys on InP grown by molecular beam epitaxy with substrate tilting. Chou, C. Y.; Torfi, A.; Wang, W. I. // Journal of Applied Physics;Oct2013, Vol. 114 Issue 15, p153111 

    GaAsSb alloys lattice-matched to InP substrate have been used in various electronic and optoelectronic applications due to their highly desirable band alignment for high-speed double heterojunction bipolar transistors. There is however an issue with GaAsSb alloys, composed approximately of 50%...

  • Quasi-Fermi level splitting and sub-bandgap absorptivity from semiconductor photoluminescence. Katahara, John K.; Hillhouse, Hugh W. // Journal of Applied Physics;2014, Vol. 116 Issue 17, p173504-1 

    A unified model for the direct gap absorption coefficient (band-edge and sub-bandgap) is developed that encompasses the functional forms of the Urbach, Thomas-Fermi, screened Thomas- Fermi, and Franz-Keldysh models of sub-bandgap absorption as specific cases. We combine this model of absorption...

  • Erratum: 'Hot electron injection effect on the microwave performance of type-I/II AlInP/GaAsSb/InP double-heterojunction bipolar transistors' [Appl. Phys. Lett. 98, 242103 (2011)]. Donald Cheng, K. Y.; Liao, C. C.; Xu, H.; Norman Cheng, K. Y.; Feng, M. // Applied Physics Letters;7/22/2013, Vol. 103 Issue 4, p049903 

    A correction to the article "Hot electron injection effect on the microwave performance of type-I/II AlInP/GaAsSb/InP double-heterojunction bipolar transistors," in the 2011 issue is presented.

  • Frequency Up-Conversion Technique for Radio Over Fiber (RoF) Remote Antenna Unit Configuration. Mohamed, N.; Idrus, S. M.; Mohammad, A. B.; Harun, H.; Mohamad, R.; Yaakob, S. // Open Electrical & Electronic Engineering Journal;2012, Vol. 6, p7 

    This work involves in transmitting of intermediate frequency (IF) signal over fiber utilizing photonics frequency conversion, which, the main focus is the development of optical front-end receiver. The system uses photodiode and heterojunction bipolar transistor (HBT) to detect and up-convert...

  • COMPARISON OF ELECTRO-THERMAL PERFORMANCE OF HETEROJUNCTION BIPOLAR TRANSISTORS BASED ON Si/SiGe AND AlGaAs/GaAs. Marani, Roberto; Perri, Anna Gina // International Journal of Research & Reviews in Applied Sciences;Aug2012, Vol. 12 Issue 2, p164 

    The aim of this paper is to present a comparison of electro-thermal performance of two HBTs based on Si/SiGe and on AlGaAs/GaAs, by means of an analytical electro-thermal model, already proposed by us, able to calculate the temperature and current distribution for any integrated device, whose...

  • FREQUENCY DOMAIN DYNAMIC THERMAL ANALYSIS IN GAAS HBT FOR POWER AMPLIFIER APPLICATIONS. Thein, T. T.; Law, C. L.; Fu, K. // Progress in Electromagnetics Research;Sep2011, Vol. 118, p71 

    Dynamic temperature distributions in GaAs HBT are numerically analyzed in frequency domain as a function of power dissipation, frequency and space. Complete thermal characteristics, including frequency-dependent thermal impedance and phase lag behavior, are presented. The analysis is also...

  • European Researchers Drive Semiconductor Technology. Mumford, Richard // Microwave Journal;Jan2012, Vol. 55 Issue 1, p51 

    The article looks at the development of a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) for millimetre-wave circuits by semiconductor researchers at the Interuniversitair Micro-Electronica Centrum Vzw (imec) in Belgium.

  • Resistive switching in a GaOx-NiOx p-n heterojunction. Zheng, K.; Zhao, J. L.; Sun, X. W.; Vinh, V. Q.; Leck, K. S.; Zhao, R.; Yeo, Y. G.; Law, L. T.; Teo, K. L. // Applied Physics Letters;10/1/2012, Vol. 101 Issue 14, p143110 

    We report a unidirectional bipolar resistive switching in an n-type GaOx/p-type NiOx heterojunction fabricated by magnetron sputtering at room temperature. The resistive switching behavior coincides with the switching between Ohmic conduction (low resistance) and rectifying behavior (high...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics