TITLE

Applied Dedicates RTP with Vantage

AUTHOR(S)
Chappell, Jeff
PUB. DATE
September 2002
SOURCE
Electronic News;9/23/2002, Vol. 48 Issue 39, p25
SOURCE TYPE
Trade Publication
DOC. TYPE
Article
ABSTRACT
Reports on the launching of the Radiance Vantage two-chamber rapid thermal processing (RTP) tool for 300 millimeter (mm) semiconductors from Applied Materials Inc. as of September 23, 2002. Features of Radiance; Predictions on the spending for 300mm tools; Market share of Applied Materials in the TP market.
ACCESSION #
7447291

 

Related Articles

  • Defect-state generation in Czochralski-grown (100) silicon rapidly annealed with incoherent light. Barbier, D.; Remram, M.; Joly, J. F.; Laugier, A. // Journal of Applied Physics;1/1/1987, Vol. 61 Issue 1, p156 

    Focuses on the defect-state generation in unimplanted silicon after rapid thermal annealing (RTA) as a function of the annealing parameters. Description and features of RTA; Importance of accurate temperature measurements and control in understanding and fundamental studies of material...

  • Applied Debuts RTP System. Dorsch, Jeff // Electronic News;09/20/99, Vol. 45 Issue 38, p30 

    Reports on the introduction of the Radiance Centura, a rapid thermal processing (RTP) system from Applied Materials Inc. targeted at manufacturing devises with 0.13-micron features and below. Estimation on world market for RTP equipment; Comments from Chris Gronet, vice president of the Thermal...

  • Temperature control slows RTP's advance. K.D. // Solid State Technology;Dec96, Vol. 39 Issue 12, p34 

    Presents highlights from the 1996 International Conference on Advanced Thermal Processing. Discussions about temperature measurement and control issues in rapid thermal processing systems; Gate oxide thickness and control for 0.25-um device generation called for by the SIA National Technology...

  • Two-step codeposition process for enhanced C54-TiSi[sub 2] formation in the Ti-Si binary system. Quintero, A.; Libera, M.; Cabral, C.; Lavoie, C.; Harper, J. M. E. // Journal of Applied Physics;5/1/2001, Vol. 89 Issue 9, p4879 

    This work demonstrates the possibility of decreasing the C54-TiSi[sub 2] formation temperature during rapid thermal annealing (RTA) by more than 50 °C using a two-step binary Ti-Si codeposition process on Si (100) substrates. This process is based on codepositing a particular double-layer...

  • Effect of annealing atmosphere on the recombination activity of copper precipitates formed by rapid thermal process in conventional and nitrogen-doped Czochralski silicon wafers. Wang, Weiyan; Yang, Deren; Ma, Xiangyang; Zeng, Yuheng; Que, Duanlin // Journal of Applied Physics;Jan2008, Vol. 103 Issue 1, p014912 

    The effect of annealing atmosphere of Ar, N2, or O2 on the recombination activity of copper (Cu) precipitates, formed by the rapid thermal process (RTP), in conventional Czochralski (CZ) silicon and nitrogen-doped CZ (NCZ) silicon wafers have been investigated. It was revealed that the...

  • Rapid-thermal-processing-based intrinsic gettering for nitrogen-doped Czochralski silicon. Xiangyang Ma; Liming Fu; Daxi Tian; Deren Yang // Journal of Applied Physics;10/15/2005, Vol. 98 Issue 8, p084502 

    In order to optimize the intrinsic gettering (IG) process based on the rapid thermal processing (RTP) for nitrogen-doped Czochralski (NCZ) silicon wafer, the effects of RTP and the following nucleation anneal on oxygen precipitation in NCZ silicon and conventional CZ silicon wafers have been...

  • Effect of intrinsic tensile stress on (001) orientation in L10 FePt thin films on glass substrates. Hsiao, S. N.; Liu, S. H.; Chen, S. K.; Yuan, F. T.; Lee, H. Y. // Journal of Applied Physics;Apr2012, Vol. 111 Issue 7, p07A702 

    Single-layered FePt thin films were deposited on glass substrates and subsequently annealed at 800 °C for various times in a rapid thermal annealing (RTA) furnace. Near-fully-L10-ordered FePt films were obtained after RTA. The accumulation of the intrinsic tensile stress is mainly contributed...

  • Rapid thermal annealing of Al(0.8% Si)/Ti10W90/a-Si contacts. Berger, S.; Weiss, B. Z.; Komem, Y. // Journal of Applied Physics;3/15/1990, Vol. 67 Issue 6, p3025 

    Presents a study which investigated the effects of rapid thermal annealing on the composition and structure of Al(0.8% Si)/Ti:W/a-Si contacts. Details of experimental procedures; Technique for eliminating interdiffusion between aluminum thin films and a-Si; Discussion on the electrical...

  • Applied installs RTP systems at TI.  // Electronic News;1/22/96, Vol. 42 Issue 2100, p46 

    Informs that Applied Materials is installing multiple Centura rapid thermal processing (RTP) systems at Texas Instruments. Joint effort between the two companies that began in May of 1994; Features of the RTP Centura including a honeycomb radiant heat source with numerous variable intensity...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics