Effect of post oxidation annealing on electrical characteristics of Ni/SiO/4 H-SiC capacitor with varying oxide thickness

Gupta, Sanjeev; Azam, A.; Akhtar, J.
April 2012
Semiconductors;Apr2012, Vol. 46 Issue 4, p545
Academic Journal
This paper describes an experimental observation of post oxidation annealing (POA) treatment on current-voltage and capacitance-voltage characteristics of Ni/SiO/4 H-SiC system with varying oxide thickness. The leakage current of fabricated structures shows an asymmetric behavior having noticeable effect of POA with the polarity of gate bias (+V or −V at the anode). When compared with the conventional wet oxidation, the POA processes greatly reduce interface-state density and enhance reliability of devices. An extensive increment in the barrier height at SiO/4 H-SiC interface was observed due to POA, which resulted into lower forward leakage current. A significant improvement in the oxide charges are also demonstrated using C-V characteristics of POA treated structures.


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