Characterization and control of the HfO[sub 2]/Si(001) interfaces

Hoshino, Y.; Kido, Y.; Yamamoto, K.; Hayashi, S.; Niwa, M.
September 2002
Applied Physics Letters;9/30/2002, Vol. 81 Issue 14, p2650
Academic Journal
The HfO[sub 2]/Si(001) interfaces formed by reactive dc sputter deposition of Hf buffer layer followed by HfO[sub 2] stacking were analyzed by high-resolution transmission electron microscopy, medium energy ion scattering (MEIS), and photoelectron spectroscopy using synchrotron-radiation lights. The present MEIS analysis determined the elemental depth profiles and revealed that no Hf buffer layer resulted in growth of SiO[sub 2] at the interface, and that the presence of the Hf layer led to the formation of Si-rich silicate-like interlayers. The binding energy shifts of Si-2p[sub 3/2] identified the chemical bonds of the interfacial layers and confirmed the formation of SiO[sub 2] (no buffer layer) and silicate layers (presence of the buffer layers) at the interfaces. The Hf-buffer layer suppresses the O diffusion toward the interface and thus the thicker the buffer layer, the thinner the Hf-silicate interlayer. The deposition condition of HfO[sub 2] (1.3 nm)/Hf (1.3 nm) has achieved the highest permittivity of 28 for HfO[sub 2] (3.6 nm) and 8 for the silicate layer (1.7 nm).


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