A Comparative Study of the Atomic Hydrogen Penetration into Thin Vanadium Films and Silicon Oxide–Gallium Arsenide Structures

Bozhkov, V. G.; Kagadeı, V. A.; Proskurovskiı, D. I.; Romas’, L. M.
October 2000
Technical Physics Letters;Oct2000, Vol. 26 Issue 10, p926
Academic Journal
It was established that the laws of atomic hydrogen penetration from an arc reflection discharge gap with a hollow cathode and self-heating element into GaAs samples coated with a thin SiO[sub 2] film differ significantly from the laws observed for the hydrogenation of thin vanadium films. The amount of hydrogen penetrating into the SiO[sub 2]/GaAs system decreases with increasing atomic hydrogen concentration in the gas phase. This is apparently related to a decrease in the probability of hydrogen atoms penetrating into the substrate, which is suggested to drop significantly with decreasing atomic energy and/or increasing hydrogen content in a thin subsurface layer.


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