Infrared spectroscopy of a silicon surface bombarded by nitrogen ions

Bachurin, V. I.; Lepshin, P. A.; Smirnov, V. K.; Churilov, A. B.
March 1998
Technical Physics Letters;Mar98, Vol. 24 Issue 3, p214
Academic Journal
Transmission Fourier-transform infrared spectroscopy was used to study the formation of a ripple topology on a silicon surface bombarded by nitrogen ions, together with the formation of silicon nitride, the evolution of its composition and structure. For the first time, an attempt is made to study the evolution of the formation of a ripple topology on the surface of silicon by analyzing the main spectral characteristics (amplitude, position, and profile) of the infrared absorption bands. It is shown that the change in the profile of the characteristic absorption band and the position of its peak correlate with the characteristics of formation of the ripples on the silicon surface. It is demonstrated that infrared transmission spectroscopy can be used to study surface structuring processes for semiconductors bombarded by ions of chemically active elements.


Related Articles

  • Fourier transform infrared spectroscopy of annealed silicon-rich silicon nitride thin films. Scardera, G.; Puzzer, T.; Conibeer, G.; Green, M. A. // Journal of Applied Physics;Nov2008, Vol. 104 Issue 10, p104310 

    A correlation between bonding changes in silicon-rich silicon nitride films, subjected to high temperature annealing under N2 ambient, and the formation of silicon nanocrystals is presented. The postannealing appearance of a shoulder between 1000 and 1100 cm-1 in the Fourier transform infrared...

  • Large-area metamaterials on thin membranes for multilayer and curved applications at terahertz and higher frequencies. Peralta, X. G.; Wanke, M. C.; Arrington, C. L.; Williams, J. D.; Brener, I.; Strikwerda, A.; Averitt, R. D.; Padilla, W. J.; Smirnova, E.; Taylor, A. J.; O'Hara, J. F. // Applied Physics Letters;4/20/2009, Vol. 94 Issue 16, p161113 

    A possible path for fabricating three-dimensional metamaterials with curved geometries at optical and infrared frequencies is to stack flexible metamaterial layers. We have fabricated highly uniform metamaterials at terahertz frequencies on large-area, low-stress, free-standing 1 μm thick...

  • Surface Modification of Pd/α-Si3N4 Catalysts Through the Solvent Used During Synthesis. Implications on the CO Chemisorption Properties and Catalytic Performances. Cadete Santos Aires, F. J.; Garcia Cervantes, G.; Bertolini, J. C. // Catalysis Letters;Jun2009, Vol. 129 Issue 3/4, p266 

    Palladium catalysts supported on α-Si3N4 were prepared by impregnation with Pd(II)-acetate dissolved either in toluene or in water. The mean metal particle size of ~0.5 wt% Pd catalysts was similar (~5 nm) and independent of the way of preparation. Nevertheless, the two catalysts present very...

  • A study of the effect of the structure of plasma-chemical silicon nitride on its masking properties. Garmash, V.; Egorkin, V.; Zemlyakov, V.; Kovalchuk, A.; Shapoval, S. // Semiconductors;Dec2015, Vol. 49 Issue 13, p1727 

    Dependence of the chemical composition of a film of plasma-chemical silicon nitride on the technological parameters of the deposition process is studied. The stages in which the process parameters are optimized in order to improve the masking properties of the film are described. A systematic...

  • Correlation of FT-IR epitaxial thickness measurement. Kostoulas, Yiorgos; Kneissl, Gerhart; Kohl, Ian // Solid State Technology;Jul2000, Vol. 43 Issue 7, p289 

    Presents a study which examined the use of the Fourier transform infrared (FT-IR) technology for the measurement of silicon epitaxial layer thickness. Relevant theory; Comparison of the performance of a spectroscopic tool with interferogram-based tools; Epi layer thickness and transition region...

  • Synthesis and characterization of polyvinylsilazane as a precursor for SiN based ceramic materials. Reutenauer, Justin W.; Coons, Timothy P.; Hill, Christopher L.; Arpin, Kevin A.; Kmetz, Michael A.; Suib, Steven L. // Journal of Materials Science;Oct2011, Vol. 46 Issue 20, p6538 

    This investigation focused on the synthesis and characterization of a polyvinylsilazane (PVSZ) polymer. This material shows promise as a precursor for silicon nitride/silicon carbide based ceramic materials. The polymer was synthesized via the ammonolysis of vinyltrichlorosilane (VTS) in...

  • Effect of thickness on the photoluminescence of silicon quantum dots embedded in silicon nitride films. Rodriguez-Gómez, A.; García-Valenzuela, A.; Haro-Poniatowski, E.; Alonso-Huitrón, J. C. // Journal of Applied Physics;Jun2013, Vol. 113 Issue 23, p233102 

    In this work, the effect of film thickness on the photoluminescence (PL) spectra of Si quantum dots embedded in silicon nitride films is investigated experimentally and theoretically. The films were deposited by remote plasma enhanced chemical vapor deposition using the same SiH2Cl2/H2/Ar/NH3...

  • Vibrational Spectroscopy of Chemical Species in Silicon and Silicon-Rich Nitride Thin Films. Bugaev, Kirill O.; Zelenina, Anastasia A.; Volodin, Vladimir A. // International Journal of Spectroscopy;2012, p1 

    Vibrational properties of hydrogenated silicon-rich nitride (SiNx:H) of various stoichiometry (0.6 ⩽ x ⩽ 1.3) and hydrogenated amorphous silicon (a-Si:H) films were studied using Raman spectroscopy and Fourier transform infrared spectroscopy. Furnace annealing during 5 hours in Ar...

  • Low Temperature Deposition of SiNx Thin Films by the LPCVD Method. Tijanić, Zdenko; Ristić, Davor; Ivanda, Mile; Bogdanović-Radovi ć, Ivančica; Marciu č, Marijan; Ristić, Mira; Gamulin, Ozren; Musić, Svetozar; Furić, Krešimir; Chiasera, Alesandro; Ferrari, Maurizio; Righini, Giancarlo Cesare // Croatica Chemica Acta;Apr2012, Vol. 85 Issue 1, p97 

    Thin silicon rich nitride (SiNx) films were deposited using the LPCVD (Low Pressure Chemical Vapor Deposition) method. Silane diluted in argon and ammonia were used as the reactant gasses, and the low temperature deposition at 570 °C was used. The films were deposited on silicon (111)...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics