TITLE

Infrared spectroscopy of a silicon surface bombarded by nitrogen ions

AUTHOR(S)
Bachurin, V. I.; Lepshin, P. A.; Smirnov, V. K.; Churilov, A. B.
PUB. DATE
March 1998
SOURCE
Technical Physics Letters;Mar98, Vol. 24 Issue 3, p214
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Transmission Fourier-transform infrared spectroscopy was used to study the formation of a ripple topology on a silicon surface bombarded by nitrogen ions, together with the formation of silicon nitride, the evolution of its composition and structure. For the first time, an attempt is made to study the evolution of the formation of a ripple topology on the surface of silicon by analyzing the main spectral characteristics (amplitude, position, and profile) of the infrared absorption bands. It is shown that the change in the profile of the characteristic absorption band and the position of its peak correlate with the characteristics of formation of the ripples on the silicon surface. It is demonstrated that infrared transmission spectroscopy can be used to study surface structuring processes for semiconductors bombarded by ions of chemically active elements.
ACCESSION #
7326673

 

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