TITLE

Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates

AUTHOR(S)
Mamutin, V. V.; Ulin, V. P.; Tret’yakov, V. V.; Ivanov, S. V.; Konnikov, S. G.; Kop’ev, P. S.
PUB. DATE
January 1999
SOURCE
Technical Physics Letters;Jan99, Vol. 25 Issue 1, p1
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
It is shown that GaN layers can be grown on (100)- and (111)-oriented porous single-crystal GaAs substrates by molecular-beam epitaxy with plasma activation of the nitrogen by an rf electron cyclotron resonance discharge. The resulting undoped epitaxial layers possessed n-type conductivity with a carrier concentration ∼10[sup 18]. Data obtained by scanning electron microscopy and cathodoluminescence indicate that at thicknesses ∼2000 Å, continuous layers of the cubic GaN modification are obtained regardless of the substrate orientation.
ACCESSION #
7326327

 

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