TITLE

Phonon–Plasmon Interaction in Tunneling GaAs/AlAs Superlattices

AUTHOR(S)
Volodin, V. A.; Efremov, M. D.; Preobrazhenskiı, V. V.; Semyagin, B. R.; Bolotov, V. V.; Sachkov, V. A.; Galaktionov, E. A.; Kretinin, A. V.
PUB. DATE
June 2000
SOURCE
JETP Letters;6/10/2000, Vol. 71 Issue 11, p477
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The phonon–plasmon interaction in tunneling GaAs[sub n]/AlAs[sub m] superlattices (m = 5 and 6≥n≥0.6 monolayers) was studied by Raman scattering spectroscopy. The interaction of optical phonons localized in GaAs and AlAs layers with quasi-three-dimensional plasmons strengthens as the thickness of GaAs quantum wells decreases and the electronic states in the superlattices become delocalized due to tunneling. It is assumed that the plasmons also interact with the TO-like phonon modes localized in quantum islands or in thin ruffled layers. © 2000 MAIK “Nauka / Interperiodica”.
ACCESSION #
7320889

 

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