TITLE

Anisotropy of optical phonons in semiconductor superlattices: Raman scattering experiments

AUTHOR(S)
Ténné, D. A.; Gaısler, V. A.; Moshegov, N. T.; Toropov, A. I.; Shebanin, A. P.
PUB. DATE
July 1998
SOURCE
JETP Letters;7/1/98, Vol. 68 Issue 1, p53
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Experiments on Raman scattering in the “forward” geometry, permitting observation of anisotropy of the optical phonons, are performed on specially prepared short-period GaAs/AlAs superlattice structures with the substrates removed and the surfaces covered with an antireflective layer. The experimental data agree well with the computational results obtained for the angular dispersion of optical phonons in superlattices on the basis of a modified continuum model. © 1998 American Institute of Physics.
ACCESSION #
7320471

 

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