Current-voltage characteristics of SIS structures with localized states in the material of the barrier layer

Devyatov, I. A.; Kupriyanov, M. Yu.
August 1998
Journal of Experimental & Theoretical Physics;Aug98, Vol. 87 Issue 2, p375
Academic Journal
Elastic resonant tunneling through a single localized state in an insulating layer (I-layer) situated in the constriction zone between two thick superconducting electrodes is investigated theoretically, and the current-voltage characteristic (IVC) of the structure is calculated. The accompanying analysis leads to the prediction that an appreciable current can flow through the structure, not at eV = 2 Δ (Δ is the modulus of the order parameter of the superconducting electrodes) as in the case of an ordinary SIS junction, but at eV ≥ δ, and also that the IVC can acquire segments of negative differential resistance in the case of tunneling through a single localized state. Averaging of the IVC over an ensemble of localized states distributed uniformly throughout the volume of the I-layer and with respect to the energy near the chemical potential μ in the limit Γ[sub 0]/Δ « 1 (&Gamma[sub 0] is the half-width of the resonance line of the localized state) produces a smaller excess current than in a junction of the SNS type. It is shown that the IVC's exhibit a transition from an excess current to a deficit current as decreases in the high-voltage range.


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