Luminescence spectra of blue and green light-emitting diodes based on multilayer InGaN/AlGaN/GaN heterostructures with quantum wells

Zolina, K. G.; Kudryashov, V. E.; Turkin, A. N.; Yunovich, A. É.
September 1997
Semiconductors;Sep97, Vol. 31 Issue 9, p901
Academic Journal
The luminescence spectra of blue and green light-emitting diodes based on In[sub x]Ga[sub 1-x]N/Al[sub y]Ga[sub 1-y]N/GaN heterostructures with a thin (2-3 nm) In[sub x]Ga[sub 1-x]N active layer have been investigated in the temperature and current intervals 100-300 K and J = 0.01-20 mA, respectively. The spectra of the blue and green light-emitting diodes have maxima in the interavals hω[sub max] = 2.55-2.75 eV and hω[sub max] = 2.38-2.50 eV, respectively, depending on the In content in the active layer. The spectral intensity of the principal band decreases exponentially in the long-wavelength region with energy constant E[sub 0] = 45-70 meV; this is described by a model that takes into account the tails of the density of states in the two-dimensional active region and the degree of filling of the tails near the band edges. At low currents radiative tunneling recombination with a voltage-dependent maximum in the spectrum is observed in the spectra of the blue diodes. A model of the energy diagram of the heterostructures is discussed.


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