TITLE

Electron-hole Coulomb interaction in InGaN quantum dots

AUTHOR(S)
Bugrov, V. E.; Konstantinov, O. V.
PUB. DATE
October 1998
SOURCE
Semiconductors;Oct98, Vol. 32 Issue 10, p1101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In contrast to group-III arsenide-based quantum dots, group-III nitride-based quantum dots are much smaller in size and have less conduction band offset. For this reason, it is important to take into account the electron-hole Coulomb interaction in which the spherical quantum dot is substituted for the cube-shaped quantrum dot, which in this paper is treated within the Hartree approximation. In addition to making the electron binding energy several times larger, this strong Coulomb interaction between carriers in quantum dots makes conventional distribution functions invalid, requiring their recalculation. Such calculations reveal that while the one-particle distribution functions are donor-like, the electron-hole function is quite different from its predecessors.
ACCESSION #
7318596

 

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