TITLE

Characteristics of the formation of (Al, Ga)Sb/InAs heterointerfaces in molecular-beam epitaxy

AUTHOR(S)
Neklyudov, P. V.; Ivanov, S. V.; Mel’tser, B. Ya.; Kop’ev, P. S.
PUB. DATE
October 1997
SOURCE
Semiconductors;Oct97, Vol. 31 Issue 10, p1067
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A thermodynamic model is given for the molecular-beam epitaxy formation of InSb, GaAs, and AlAs heterointerfaces in (Al, Ga)Sb/InAs heterostructures. The maximum critical temperature of formation of a planar InSb-type heterointerface on an (Al, Ga)Sb layer, T ≈ 390 °C, is determined from a comparison of the pressure of Sb[sub 4] molecules in the external flux with their equilibrium value above a stressed monolayer on a heterointerface and is found to be in good agreement with existing experimental data. In contrast, the critical temperature of formation of a heterointerface of the AlAs (GaAs) type, corresponding to the onset of rapid reevaporation of As, is much higher than the growth temperatures normally used in molecular-beam epitaxy (350-550 °C).
ACCESSION #
7318571

 

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