Bistability of electroluminescence in a type-II AlGaAsSb/InGaAsSb double heterostructure

Zhurtanov, B. E.; Moiseev, K. D.; Mikhaılova, M. P.; Voronina, T. I.; Stoyanov, N. D.; Yakovlev, Yu. P.
March 1999
Semiconductors;Mar1999, Vol. 33 Issue 3, p355
Academic Journal
Electroluminescence bistability is observed in a typ-II P-AlGaAsSb/p-InGaAsSb/ N-AlGaAsSbheterostructure with lightly doped cladding layers and a narrow-gap active region (the width of the band gap is E[sub g]= 326 meV at the temperature T = 77 K). A currentcontrolled negative differential resistance is observed in the forward branch of the currentvoltage characteristic. Strong narrowband electroluminescence (half-width ∼ 7 - 10 meV) is observed at the end of the negative differential resistance interval, where the photon energy at the radiation maximum exceeds the width of the band gap of the narrow-gap material by 50 meV. This phenomenon is attributed to the tunneling injection and indirect radiative recombination of carriers localized at the AlGaAsSb/InGaAsSb heterojunction. As the voltage is increased, radiative transitions in the bulk of the active region begin to provide the main contribution, and the radiation maximum jumps to the long-wavelength end. Tunneling injection structures of this kind can be used to construct highly efficient current-controlled lightemitting diodes.


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