Scaling in the regime of the quantum Hall effect and hole localization in p-Ge/Ge[sub 1-x]Si[sub x] heterostructures

Arapov, Yu. G.; Gorodilov, N. A.; Neverov, V. N.; Kharus, G. I.; Shelushinina, N. G.
March 1997
Semiconductors;Mar1997, Vol. 31 Issue 3, p222
Academic Journal
For multilayer Ge/Ge[sub 1-x]Si[sub x] (x...0.03) heterostructures with two-dimensional p-type conductivity over the Ge layers, the temperature and magnetic dependences of the longitudinal resistivity ρ[sub xx] and the Hall resistivity ρ[sub xy] have been studied in fields up to 12 T in the temperature interval of T= (0.1-15) K. The observed decrease of the amplitude of the ρ[sub xx] peaks with decreasing temperature for T≤2 K corresponds to a transition to the scaling regime under the conditions of the quantum Hall effect. Scaling diagrams in the (σ[sub xy], σ[sub xx]) coordinates have been constructed for the region of fields and temperatures of interest. It is found that, on the whole, the form of the diagrams corresponds to the theoretical predictions. It is shown that the character of the flux lines on the scaling diagrams is directly connected with such a parameter as the width of a band of delocalized states at the center of the Landau level.


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