Absorption and Photoconductivity of Boron-Compensated μc-Si:H

Kazanskiı, A. G.; Mell, H.; Terukov, E. I.; Forsh, P. A.
March 2000
Semiconductors;Mar2000, Vol. 34 Issue 3, p367
Academic Journal
A study is reported of absorption, conductivity, and photoconductivity of photosensitive μc-Si:H weakly doped with boron. The dependences of photoconductivity on the temperature and the intensity of light were measured in a temperature range of 100-400 K for photon energies of 0.9, 1.3, and 1.8 eV. The results obtained are explained by the dominant contribution of the microcrystalline phase and the states at the interfaces ofmicrocrystals to the transport and recombination of nonequilibrium carriers in μc-Si:H. Possible recombination mechanisms and the change of their role with temperature are analyzed.


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