TITLE

The Staebler–Wronski Effect and Temperature Dependences of Photoconductivity in p-type a-Si:H

AUTHOR(S)
Kuznetsov, S. V.
PUB. DATE
June 2000
SOURCE
Semiconductors;Jun2000, Vol. 34 Issue 6, p723
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Temperature dependences of the photoconductivity of boron doped a-Si:H films both prior to and after prolonged illumination were studied. It was found that the photoconductivity of films under study in the temperature range 200-300 K (intermediate temperatures) is independent of the doping level and the concentration of deep recombination centers (dangling bonds). A model of recombination is used to explain the experimental results; according to this model, the occupancy function of neutral dangling bonds in p-type a-Si:H (and, consequently, also the photoconductivity) is determined by the parameters of the states of the valence band tail and is independent of the doping level and of the total concentration of dangling bonds.
ACCESSION #
7318175

 

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