TITLE

InGaAsSb(Gd)/InAsSbP Double Heterostructure Lasers (λ = 3.0–3.3μm) for Diode Laser Spectroscopy

AUTHOR(S)
Aıdaraliev, M.; Beyer, T.; Zotova, N. V.; Karandashev, S. A.; Matveev, B. A.; Remennyı, M. A.; Stus’, N. M.; Talalakin, G. N.
PUB. DATE
July 2000
SOURCE
Semiconductors;Jul2000, Vol. 34 Issue 7, p848
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Data on threshold currents, the differential quantum efficiency, the emission spectrum, current tuning, and radiation power of mesastripe InGaAsSb(Gd)/InAsSbP double heterostructure lasers with λ = 3.0-3.3 μm and a cavity length of 70-150 μm in a temperature range of 50-107 K are reported. In the experiments, the threshold currents I[sub th] < 10 mA, a total output power of 0.5 mW/facet, and a single-mode power of 0.43 mW at 77 K in the cw regime were obtained. Lasers operated in the single-mode regime at currents I ≤ 6I[sub th], the spectral purity was as high as 650: 1, the tuning rate was 210 cm[sup -1]/A, and the tuning range was 10 cm[sup -1] wide. An example of methane detection at 3028.75 cm[sup -1] is presented.
ACCESSION #
7318090

 

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