TITLE

Properties of Wide-Mesastripe InGaAsP/InP Lasers

AUTHOR(S)
Golikova, E. G.; Kureshov, V. A.; Leshko, A. Yu.; Lyutetskiı, A. V.; Pikhtin, N. A.; Ryaboshtan, Yu. A.; Skrynnikov, G. A.; Tarasov, I. S.; Alferov, Zh. I.
PUB. DATE
July 2000
SOURCE
Semiconductors;Jul2000, Vol. 34 Issue 7, p853
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Wide-mesastripe InGaAsP/InP heterostructure lasers emitting at 1.3-1.5 μm were grown by metalorganic chemical vapor deposition (MOCVD). Radiation-power-current and spectral characteristics of the lasers have been studied in pulsed and continuous wave (cw) operation in the temperature range of 10-60°C. The temperature of the active region of the diode laser is higher by 30-60°C than that of the copper heatsink upon saturation of the cw output power. The temperature dependence of the differential quantum efficiency strongly affects the cw output power. Output powers of 3 and 2.6 W are achieved in mesastripe lasers in cw operation, and 9 and 6.5 W in pulsed operation, at wavelengths of 1.3 and 1.5 μm, respectively.
ACCESSION #
7318088

 

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