Optical spectra and electronic structure of indium nitride

Sobolev, V. V.; Zlobina, M. A.
April 1999
Semiconductors;Apr99, Vol. 33 Issue 4, p385
Academic Journal
A complete set of fundamental optical functions is calculated for hexagonal indium nitride (w-InN) in the energy range 0-130 eV based on knowledge of the reflection spectrum. The integrated spectrum of the dielectric permittivity is resolved into elementary components. Three fundamental parameters are determined for each component (the maximum energy, the width, and the oscillator strength). A possible origin of these components of the dielectric constant is proposed on the basis of known theoretical calculations of the indium nitride band structure.


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