TITLE

Optical spectra and electronic structure of indium nitride

AUTHOR(S)
Sobolev, V. V.; Zlobina, M. A.
PUB. DATE
April 1999
SOURCE
Semiconductors;Apr99, Vol. 33 Issue 4, p385
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A complete set of fundamental optical functions is calculated for hexagonal indium nitride (w-InN) in the energy range 0-130 eV based on knowledge of the reflection spectrum. The integrated spectrum of the dielectric permittivity is resolved into elementary components. Three fundamental parameters are determined for each component (the maximum energy, the width, and the oscillator strength). A possible origin of these components of the dielectric constant is proposed on the basis of known theoretical calculations of the indium nitride band structure.
ACCESSION #
7317744

 

Related Articles

  • Terahertz spectroscopic study of vertically aligned InN nanorods. Ahn, H.; Ku, Y.-P.; Wang, Y.-C.; Chuang, C.-H.; Gwo, S.; Pan, Ci-Ling // Applied Physics Letters;10/15/2007, Vol. 91 Issue 16, p163105 

    Terahertz time-domain spectroscopy has been used to investigate terahertz conductivity and dielectric response of indium nitride (InN) nanorod array and epitaxial film. The complex terahertz conductivity of InN film is well fitted by the Drude model, while the negative imaginary conductivity of...

  • Self-pulsation in InGaN laser diodes with saturable absorber layers. Ohno, T.; Ito, S.; Kawakami, T.; Taneya, M. // Applied Physics Letters;8/11/2003, Vol. 83 Issue 6, p1098 

    Self-pulsating InGaN laser diodes with a p-type InGaN saturable absorber (SA) layer are demonstrated. The SA layer consists of a 1-nm-thick p-type InGaN well surrounded by 2-nm-thick p-type In[sub 0.02]Ga[sub 0.98]N barriers. The lower barrier of the SA is located on the 18-nm-thick p-type...

  • Selective fabrication of InGaN nanostructures by the focused ion beam/metalorganic chemical vapor... Lachab, M.; Nozaki, M. // Journal of Applied Physics;2/1/2000, Vol. 87 Issue 3, p1374 

    Focuses on a study on the selective fabrication of indium gallium nitride (InGaN) nanostructures on silicon coated GaN/sapphire substrates using the focused ion beam/metalorganic chemical vapor deposition process. Structural and optical properties of InGaN/GaN nanostructures; Experimental...

  • Spectroscopic ellipsometry study of the In1-xGaxAsyP1-y/InP heterojunctions grown by metalorganic chemical-vapor deposition. Drevillon, B.; Bertran, E.; Alnot, P.; Olivier, J.; Razeghi, M. // Journal of Applied Physics;11/15/1986, Vol. 60 Issue 10, p3512 

    Presents a study that measured the dielectric functions of indium (In)-phosphorus, In-gallium (Ga)-arsenic (As)and In-Ga-As phosphorus (P) epitaxial layers. Use of a polarization-modulation spectroscopic ellipsometer; Verification of the oxide removal procedure; Structural nature of...

  • Improved coherent terahertz emission by modification of the dielectric environment. Zedler, M.; Janke, C.; Bolivar, P. Haring; Kurz, H.; Künzel, H. // Applied Physics Letters;11/17/2003, Vol. 83 Issue 20, p4196 

    We present a generally applicable approach to enhance the conversion efficiency from optical input to usable coherent output power for THz emitters based on optically excited charge carriers. Guided by numerical simulations, the dielectric environment of the emitter is modified to improve...

  • Surface Plasmon Polariton Modulator with Periodic Patterning of Indium Tin Oxide Layers. Babicheva, Viktoriia E.; Lavrinenko, Andrei V. // AIP Conference Proceedings;10/5/2011, Vol. 1398 Issue 1, p61 

    We study a metal-dielectric-metal waveguide as an absorption modulator. The system consists of an indium tin oxide (ITO) layer and silicon nitride (Si3N4) imbedded between two silver plates. We analyze the system and perform numerical simulations with the aim to increase transmittance and...

  • Characterization of InGaN thin films using high-resolution x-ray diffraction. Go¨rgens, L.; Ambacher, O.; Stutzmann, M.; Miskys, C.; Scholz, F.; Off, J. // Applied Physics Letters;1/31/2000, Vol. 76 Issue 5, p577 

    Wurtzite InGaN thin films grown by metalorganic chemical vapor deposition on sapphire substrates with and without GaN buffer layers are investigated by high-resolution x-ray diffraction measurements. The structural quality, lattice constants, strain, and indium composition of 100 nm thick films...

  • Photoluminescence studies on InGaN/GaN multiple quantum wells with different degree of localization. Hao, M.; Zhang, J.; Zhang, X. H.; Chua, S. // Applied Physics Letters;12/30/2002, Vol. 81 Issue 27, p5129 

    It has been found, by using photoluminescence (PL) studies, that both the localized states and nonradiative recombination centers in In[sub 0.06]Ga[sub 0.94]N/GaN multiple quantum wells (MQWs) can be greatly suppressed by inserting a monolayer of AlN before the growth of each well layer. While...

  • Luminescence energy and carrier lifetime in InGaN/GaN quantum wells as a function of applied biaxial strain. Shapiro, N. A.; Feick, H.; Hong, W.; Cich, M.; Armitage, R.; Weber, F. R. // Journal of Applied Physics;10/1/2003, Vol. 94 Issue 7, p4520 

    Continuous-wave and time-resolved photoluminescence of InGaN quantum wells are measured as a function of applied biaxial strain, which provides a unique means of altering the built-in polarization field in these structures. The direction and magnitude of the shift of the luminescence-peak energy...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics