TITLE

Luminescence and electrical properties of InGaN/AlGaN/GaN light emitting diodes with multiple quantum wells

AUTHOR(S)
Kudryashov, V. E.; Turkin, A. N.; Yunovich, A. É.; Kovalev, A. N.; Manyakhin, F. I.
PUB. DATE
April 1999
SOURCE
Semiconductors;Apr99, Vol. 33 Issue 4, p429
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Luminescence spectra of light-emitting diodes based on InGaN/AlGaN/GaN heterostructures with multiple quantum wells are studied for currents in the range J = 0.15 µA-150 mA. The comparatively high quantum efficiency for low J (J[sub max] = 0.5-1 mA) is a consequence of a low probability for the nonradiative tunnel current. The current-voltage characteristics J(V) are studied for J = 10[sup -12]-10[sup -1] A; they are approximated by the function V = φ[sub k]+mkT·[ln(J/J[sub 0]) +(J/J[sub 1])[sup 0.5]]+J·R[sub s]. The portion of V∝(J/J[sub 1])[sup 0.5] and measurements of the dynamic capacitance indicate that i-layers adjacent to the active layer play an important role. The spectra are described by a model with a two-dimensional density of states with exponential tails in multiple quantum wells. The rise in T with increasing J is determined from the short-wavelength decay of the spectrum of the blue diodes: T = 360-370 K for J = 80-100 mA. An emission band is observed at 2.7-2.8 eV from green diodes at high J; this band may be explained by phase separation with different amounts of In in the InGaN.
ACCESSION #
7317733

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics