1.55–1.6μm Electroluminescence of GaAs Based Diode Structures with Quantum Dots

Zhukov, A. E.; Volovik, B. V.; Mikhrin, S. S.; Maleev, N. A.; Tsatsul’nikov, A. F.; Nikitina, E. V.; Kayander, I. N.; Ustinov, V. M.; Ledentsov, N. N.
September 2001
Technical Physics Letters;Sep2001, Vol. 27 Issue 9, p734
Academic Journal
Laser diode structures on GaAs substrates with an active region employing laterally associated InAs quantum dots obtained by low-temperature MBE exhibit electroluminescence at a wavelength of 1.55-1.6 µm in a temperature range from 20 to 260 K.


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