TITLE

High-Power 1.8-μm InGaAsP/InP Lasers

AUTHOR(S)
Golikova, E. G.; Kureshov, V. A.; Leshko, A. Yu.; Lyutetskiı, A. V.; Pikhtin, N. A.; Ryaboshtan, Yu. A.; Slipchenko, S. O.; Sokolova, Z. N.; Fetisova, N. V.; Bondarev, A. D.; Tarasov, I. S.
PUB. DATE
February 2002
SOURCE
Technical Physics Letters;Feb2002, Vol. 28 Issue 2, p113
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Separately bounded InGaAsP/InP laser heterostructures with two stressed quantum wells emitting at a wavelength of 1.8 µm were obtained by metalorganic vapor-phase epitaxy. The laser diodes with a strip width of 100 µm provide for an output radiation power of 1.2 W in the continuous operation mode at a temperature of 20°C. A minimum threshold current density was 320 A/cm² and a differential quantum efficiency was η[sub d] = 28% for a Fabry-Perot resonator length of 1.4 mm. The internal optical losses in the laser heterostructure studied amounted to 5.6 cm[sup -1].
ACCESSION #
7294071

 

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