High-Power 1.8-μm InGaAsP/InP Lasers

Golikova, E. G.; Kureshov, V. A.; Leshko, A. Yu.; Lyutetskiı, A. V.; Pikhtin, N. A.; Ryaboshtan, Yu. A.; Slipchenko, S. O.; Sokolova, Z. N.; Fetisova, N. V.; Bondarev, A. D.; Tarasov, I. S.
February 2002
Technical Physics Letters;Feb2002, Vol. 28 Issue 2, p113
Academic Journal
Separately bounded InGaAsP/InP laser heterostructures with two stressed quantum wells emitting at a wavelength of 1.8 µm were obtained by metalorganic vapor-phase epitaxy. The laser diodes with a strip width of 100 µm provide for an output radiation power of 1.2 W in the continuous operation mode at a temperature of 20°C. A minimum threshold current density was 320 A/cm² and a differential quantum efficiency was η[sub d] = 28% for a Fabry-Perot resonator length of 1.4 mm. The internal optical losses in the laser heterostructure studied amounted to 5.6 cm[sup -1].


Related Articles

  • Large monolithic two-dimensional arrays of GaInAsP/InP surface-emitting lasers. Liau, Z. L.; Walpole, J. N. // Applied Physics Letters;3/2/1987, Vol. 50 Issue 9, p528 

    A 1 mm×3 mm monolithic two-dimensional array (incoherent) of 112 mass-transported buried-heterostructure lasers with integrated beam deflectors has been fabricated with good uniformity. An average cw output of 14 mW per laser and an average optical flux of 57 W/cm2 have been obtained when...

  • Semi-insulator-embedded InGaAsP/InP flat-surface buried heterostructure laser. Tanaka, K.; Hoshino, M.; Wakao, K.; Komeno, J.; Ishikawa, H.; Yamakoshi, S.; Imai, H. // Applied Physics Letters;12/1/1985, Vol. 47 Issue 11, p1127 

    A new structure semi-insulator-embedded flat-surface buried heterostructure 1.3 μm InGaAsP/InP laser has been developed using chloride vapor phase epitaxy. cw threshold currents as low as 18 mA and high-temperature cw operation up to 100 °C have been obtained. Small-signal response above 4...

  • Low-Threshold-Current 1.2–1.5μm Laser Diodes Based on AlInGaAs/InP Heterostructures. Slipchenko, S. O.; Lyutetskiı, A. V.; Pikhtin, N. A.; Fetisova, N. V.; Leshko, A. Yu.; Ryaboshtan, Yu. A.; Golikova, E. G.; Tarasov, I. S. // Technical Physics Letters;Feb2003, Vol. 29 Issue 2, p115 

    Separate confinement AlInGaAs/InP multiwell laser heterostructures emitting in a wavelength range of 1.2-1.5 μm have been synthesized by metalorganic vapor-phase epitaxy. The threshold current of laser diodes with a strip width of 4.5 μm and a cavity length of 200 μm was as low as 10...

  • Continuously graded-index separate confinement heterostructure multiquantum well Ga1-xInxAs1-yPy/InP ridge waveguide lasers grown by low-pressure metalorganic chemical vapor deposition with lattice-matched quaternary wells and barriers. Ludowise, M. J.; Ranganath, T. R.; Fischer-Colbrie, A. // Applied Physics Letters;10/8/1990, Vol. 57 Issue 15, p1493 

    Continuously graded-index separate confinement heterostructure multiple quantum well (four wells, Lz ∼50 Å) lasers fabricated in the Ga1-xInxAs1-yPy/InP system with lattice-matched quaternary wells (bulk emission wavelength λg=1.39 μm) and barriers (λg=1.2 μm) are reported....

  • Determination of very thin semiconductor layer thickness by a photothermal method. Yacoubi, N.; Alibert, C. // Journal of Applied Physics;6/15/1991, Vol. 69 Issue 12, p8310 

    Describes a photothermal method for the determination of thin gallium indium arsenide layer thickness of InP/GaInAs/InP heterostructure. Theoretical model underlying the method; Influence of indium phosphide substrate absorption on theoretical phase variations; Optical absorption spectrum of...

  • Linewidth-narrowed distributed feedback injection lasers with long cavity length and detuned Bragg wavelength. Liou, K.-Y.; Dutta, N. K.; Burrus, C. A. // Applied Physics Letters;3/2/1987, Vol. 50 Issue 9, p489 

    We report linewidth narrowing for 1.3-μm InGaAsP distributed feedback lasers with either a long cavity length or a detuned Bragg wavelength. The narrowest linewidth measured was 3 MHz at 6 mW for a 780-μm long-cavity laser, and was 8 MHz at 5.5 mW for a 250-μm regular-length laser with...

  • Low threshold 1.3-μm InGaAsP/InP lasers prepared by a single-step liquid-phase epitaxy. Liu, Y. Z.; Wang, C. C.; Chu, M. // Journal of Applied Physics;3/15/1988, Vol. 63 Issue 6, p2151 

    Presents information on a study which described an approach based on the properties of liquid phase epitaxy to form low threshold laser structures. Groups of indium gallium arsenide phosphorus/indium phosphide lasers; Examination of the threshold dependence of the lasers.

  • Room-temperature photopumped operation of an InGaAs-InP vertical cavity surface-emitting laser. Deppe, D. G.; Singh, S.; Dupuis, R. D.; Gerrard, N. D.; Zydzik, G. J.; van der Ziel, J. P.; Green, C. A.; Pinzone, C. J. // Applied Physics Letters;5/28/1990, Vol. 56 Issue 22, p2172 

    Data are presented demonstrating the room-temperature operation of an InP-InGaAs vertical cavity surface-emitting laser. The laser structure has an active region consisting of a 2-μm-thick bulk InGaAs layer and has an emission wavelength of 1.65 μm. Both the front and rear mirrors consist...

  • Strained multiple quantum well lasers emitting at 1.3 mum grown by low-pressure metalorganic.... Coblentz, D.; Tanbun-Ek, T.; Logan, R.A.; Sergent, A.M.; Chu, S.N.G.; Davisson, P.S. // Applied Physics Letters;7/22/1991, Vol. 59 Issue 4, p405 

    Examines the power of InGaAsP/InP semiconductor lasers. Use of vapor phase epitaxy; Observation of continuous wave threshold current in uncoated lasers; Highest output power in lasers with antireflection-high reflection coating configuration; Improvement of laser performance.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics