Distribution of Electrons between Valleys and Band-Gap Narrowing at Picosecond Superluminescence in GaAs

Ageeva, N. N.; Bronevoı, I. L.; Krivonosov, A. N.
January 2001
Semiconductors;Jan2001, Vol. 35 Issue 1, p67
Academic Journal
Band-gap narrowing due to photogeneration of dense hot electron-hole plasma in GaAs was studied. Plasma was generated by picosecond light pulses, and picosecond superluminescence was observed. In this case, the total concentration of photogenerated electron-hole pairs was experimentally proved to be the sole parameter controlling the electron distribution between Γ[sub 6] and L[sub 6] valleys and the corresponding band-gap narrowing. This was explained by the fact that the carrier temperature and concentration are correlated in the presence of superluminescence.


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