TITLE

Evaluation of Mobility Gaps and Density of Localized Hole States in p-Ge/Ge[sub 1 – ][sub x]Si[sub x] Heterostructures in the Quantum Hall Effect Mode

AUTHOR(S)
Arapov, Yu. G.; Kuznetsov, O. A.; Neverov, V. N.; Kharus, G. I.; Shelushinina, N. G.; Yakunin, M. V.
PUB. DATE
May 2002
SOURCE
Semiconductors;May2002, Vol. 36 Issue 5, p519
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The temperature (0.1 K ... T ... 20 K) and magnetic field (0 T ... B ... 12 T) dependences of the longitudinal (ρ[sub xx]) and Hall (ρ[sub xy]) resistivities have been studied in detail for p-Ge/Ge[sub 1-x]Si[sub x] (x = 0.07) multilayer heterostructures with hole density p = (2.4-2.6) × 10[sup 11] cm[sup -2] and mobility μ = (1.1-1.7) × 10[sup 4] cm² V[sup -1] s[sup -1]. The energy spectrum parameters of two-dimensional (2D) hole gas in the quantum Hall effect mode have been determined. The mobility gap W = (2-2.5) meV and the background density of localized states g[sub c] = (5-7) × 10[sup 10] cm[sup -2] meV[sup -1] for the filling factors v = 1 and 2. The results are discussed in terms of long-range impurity potential models for selectively doped 2D systems.
ACCESSION #
7292001

 

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics