Evaluation of Mobility Gaps and Density of Localized Hole States in p-Ge/Ge[sub 1 – ][sub x]Si[sub x] Heterostructures in the Quantum Hall Effect Mode

Arapov, Yu. G.; Kuznetsov, O. A.; Neverov, V. N.; Kharus, G. I.; Shelushinina, N. G.; Yakunin, M. V.
May 2002
Semiconductors;May2002, Vol. 36 Issue 5, p519
Academic Journal
The temperature (0.1 K ... T ... 20 K) and magnetic field (0 T ... B ... 12 T) dependences of the longitudinal (ρ[sub xx]) and Hall (ρ[sub xy]) resistivities have been studied in detail for p-Ge/Ge[sub 1-x]Si[sub x] (x = 0.07) multilayer heterostructures with hole density p = (2.4-2.6) × 10[sup 11] cm[sup -2] and mobility μ = (1.1-1.7) × 10[sup 4] cm² V[sup -1] s[sup -1]. The energy spectrum parameters of two-dimensional (2D) hole gas in the quantum Hall effect mode have been determined. The mobility gap W = (2-2.5) meV and the background density of localized states g[sub c] = (5-7) × 10[sup 10] cm[sup -2] meV[sup -1] for the filling factors v = 1 and 2. The results are discussed in terms of long-range impurity potential models for selectively doped 2D systems.


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