Interaction of Solitons in a Medium with Relaxation of Gain and Saturable Absorption

Rozanov, N. N.; Fedorov, S. V.; Shatsev, A. N.
February 2001
Optics & Spectroscopy;Feb2001, Vol. 90 Issue 2, p261
Academic Journal
Results of numerical simulation of soliton interaction in a laser with relaxation of gain and samrable saturation are presented. Interactions of co- and counter-propagating fast and slow solitons are analyzed. Typical scenarios of collisions and new resulting soliton-like structures are found.


Related Articles

  • Damping of the relaxation resonance in multiple-quantum-well lasers by slow interwell transport. Hangleiter, A.; Grabmaier, A.; Fuchs, G. // Applied Physics Letters;5/10/1993, Vol. 62 Issue 19, p2316 

    Examines the increased damping of the relaxation resonance observed in multiple-quantum-well laser. Accounts of a model integrating the slow hole transport between individual wells; Influence of hole transport on carrier distribution; Difference between lasers of varying structure and lasers...

  • Plasma-heating induced intensity-dependent gain in semiconductor lasers. Ning, C.Z.; Moloney, J.V. // Applied Physics Letters;1/30/1995, Vol. 66 Issue 5, p559 

    Examines the plasma-heating induced intensity-dependent gain in semiconductor lasers. Dependence of scaling exponent on relaxation constant; Difference between plasma and lattice temperatures; Factors attributing the rate of heat dissipation from plasma to the lattice.

  • A detailed examination of stimulated pump-probe measurements of vibrational population relaxation. Blanchard, G.J. // Review of Scientific Instruments;Dec1996, Vol. 67 Issue 12, p4085 

    Focuses on a pump-probe laser spectroscopic scheme that measures ground state vibrational population relaxation. Form of the experimental stimulated signal; Effect of the detection scheme used; Consequences of spontaneous (Boltzmann) population of ground state vibrations; Roles of absorption,...

  • Relaxation oscillations in single-frequency InAsSb narrow band-gap lasers. Popov, Andrei; Sherstnev, Victor; Yakovlev, Yury; Werle, Peter; Mu¨cke, Robert // Applied Physics Letters;6/29/1998, Vol. 72 Issue 26 

    Relaxation oscillations have been investigated in A[sup 3]B[sup 5] narrow band-gap semiconductor lasers. Based on wideband intensity noise measurements, the relaxation oscillation frequency has been observed up to 2 GHz for a 2 mW cw single-frequency InAsSb laser at a 3.4 μm wavelength. Laser...

  • Double-well coherent laser with suppressed intersubband relaxation. Elesin, V. F.; Tsukanov, A. V.; Kapaev, V. V.; Kopaev, Yu. V. // JETP Letters;12/10/97, Vol. 66 Issue 11, p742 

    A theory of coherent lasing on a double-well structure with asymmetric barriers is constructed. On account of the appearance of a termination point of the bottom subband, such a structural element permits strong suppression of intersubband relaxation involving the emission of an optical phonon....

  • Influence of carrier relaxation on the dynamics of stimulated emission in microcavity lasers. Hilpert, M.; Klann, H. // Applied Physics Letters;12/29/1997, Vol. 71 Issue 26, p3761 

    Investigates the influence of carrier relaxation on the emission kinetics of semiconductor microcavity lasers. Role of carrier thermalization and cooling on emission dynamics; Influence of band-structure effects on thermalization dynamics; Discontinuities in emission dynamics.

  • Carrier energy relaxation in multisubband quantum well lasers with hot phonon effects. Tsai, Chin-Yi; Eastman, Lester F.; Lo, Yu-Hwa; Tsai, Chin-Yao // Journal of Applied Physics;11/1/1994, Vol. 76 Issue 9, p5334 

    Presents a study on carrier energy relaxation rates via carrier-polar optical phonon interactions with hot phonon effects in multisubband quantum well structures. Information on quantum well lasers; Theory; Results and discussion.

  • Low threshold 1.55 mum wavelength InAsP/InGaAsP strained multiquantum well laser diode grown by.... Carlin, J.F.; Syrbu, A.V.; Berseth, C.A.; Behrend, J.; Rudra, A.; Kapon, E. // Applied Physics Letters;7/7/1997, Vol. 71 Issue 1, p13 

    Examines the use of chemical beam epitaxy in solving strain relaxation problems preventing use of InAsP quantum wells in 1.55 micrometer laser. Characteristics of the quantum wells integrated in a strain-balanced laser; Confirmation of the laser emission homogeneity with an infrared camera;...

  • Theory for the ultrafast dynamics of excited clusters: interplay between elementary excitations and atomic structure. Garcia, M.E.; Jeschke, H.O.; Grigorenko, I.; Bennemann, K.H. // Applied Physics B: Lasers & Optics;2000, Vol. 71 Issue 3, p361 

    Abstract. We present a theoretical study of the short-time relaxation of clusters in response to ultrafast excitations using femtosecond laser pulses. We analyze the excitation of different types of clusters (Hg[sub n], Ag[sub n], Si[sub n], C[sub 60] and Xe[sub n]) and classify the relaxation...


Other Topics