TITLE

The Relaxation Rate of the Magnetic Moment of a Shallow Acceptor Center as a Function of Impurity Concentration in Silicon

AUTHOR(S)
Mamedov, T. N.; Andrianov, D. G.; Herlach, D.; Gorelkin, V. N.; Gritsaı, K. I.; Kormann, O.; Major, J.; Stoıkov, A. V.; Zimmermann, U.
PUB. DATE
June 2001
SOURCE
Journal of Experimental & Theoretical Physics;Jun2001, Vol. 92 Issue 6, p1004
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A study is made into the temperature dependence of residual polarization of negative muons in crystalline silicon with the concentration of impurity of the n- and p-types ranging from 8.7 x 10[sup 13] to 4.1 x 10[sup 18] cm[sup -3]. The measurements are performed in a magnetic field of 1000 G transverse to the muon spin, in the temperature range from 4.2 to 300 K. The form of the temperature dependence of the relaxation rate v of the magnetic moment of the [sub μAl[sup 0] acceptor in silicon is determined. For a nondegenerate semiconductor, the relaxation rate depends on temperature as v ∝ T[sup q] (q ≈ 3). A variation in the behavior of the temperature dependence and a multiple increase in the relaxation rate are observed in the range of impurity concentration in excess of 10[sup 18] cm[sup -3]. The importance of phonon scattering and spin-exchange scattering of free charge carriers by an acceptor from the standpoint of relaxation of the acceptor magnetic moment is discussed. The constant of hyperfine interaction in an acceptor center formed by an atom of aluminum in silicon is estimated for the first time: A[sub hf](A1)/2π ∼ 2.5 x 10[sup 6] s[sup -1].
ACCESSION #
7290018

 

Related Articles

  • Self-interstitials and the 935 cm-1 band in silicon. Stein, H. J. // Applied Physics Letters;8/28/1989, Vol. 55 Issue 9, p870 

    Substitutional carbon in Czochralski Si is found to decrease the formation rate for a 935 cm-1 infrared absorption band under neutron irradiation while that for a 965 cm-1 band (interstitial carbon trapped at interstitial oxygen) increases. The observations support a controversial previous...

  • Impurity centers in silicon doped with rare-earth impurities of dysprosium, holmium, erbium, and ytterbium. Emtsev, V. V.; Poloskin, D. S.; Sobolev, N. A.; Shek, E. I.; Michel, J.; Kimerling, L. C. // Semiconductors;Jun99, Vol. 33 Issue 6, p603 

    The results of an investigation of the donor centers in Czochralski-grown silicon ion-implanted with rare-earth impurities of Dy, Ho, Er, and Yb are presented. The formation of three groups of dominant donors with ionization energies less than 0.2 eV in silicon after annealing at 700 and 900...

  • New shallow donors in high-purity silicon single crystal. Yu, Zhiyi; Huang, Y. X.; Shen, S. C. // Applied Physics Letters;11/13/1989, Vol. 55 Issue 20, p2084 

    High-resolution photothermal ionization spectroscopy has been performed on n-type high-purity silicon crystals. Two new shallow donors with binding energies of 36.61 and 36.97 meV, respectively, are observed for the first time, in addition to lithium (Li), lithium-oxygen complex [D(Li,O)],...

  • Impurity gettering by misfit dislocations in Si (2% Ge) epitaxy: nickel. Lee, D. M.; Posthill, J. B.; Shimura, F.; Rozgonyi, G. A. // Applied Physics Letters;8/1/1988, Vol. 53 Issue 5, p370 

    The microstructure associated with nickel gettering by an epitaxial misfit dislocation network generated in Si(2% Ge) chemical vapor deposition films has been determined using transmission electron microscopy. The configuration of misfit dislocations is a well-characterized network of b=a/2<011>...

  • Photoluminescence determination of the nitrogen doping concentration in 6H-SiC. Henry, A.; Kordina, O. // Applied Physics Letters;11/7/1994, Vol. 65 Issue 19, p2457 

    Presents a calibration procedure for the nitrogen impurity in 6 hydrogen-silicon carbide. Validity of the calibration for a large range of n-type doping; Effects of excitation density, temperature during the photoluminescence experiments and the observation of acceptor related lines;...

  • The effect of impurity content on point defect evolution in ion implanted and electron.... Libertino, S.; Benton, J.L. // Applied Physics Letters;6/2/1997, Vol. 70 Issue 22, p3002 

    Examines the effect of impurity content on point defect evolution in ion implanted and electron irradiated silicon. Comparison between defect complexes generated in crystalline silicon; Presentation of deep level transient spectroscopy in monitoring both vacancy-type; Observation on implanted...

  • Effect of implant temperature on secondary defects created by MeV Sn implantation in silicon. Wong-Leung, J.; Jagadish, C.; Conway, M. J.; Fitz Gerald, J. D. // Journal of Applied Physics;3/1/2001, Vol. 89 Issue 5, p2556 

    Secondary defects induced by ion implantation in silicon after annealing have been previously shown to vary with the implantation and annealing conditions. However, in the low dose implants, well below the amorphization dose, the defects have been predominantly characterized to be interstitial...

  • Theoretical analysis of the impurity distribution in single-crystal silicon. Ponomarev, K. V.; Korzhavyi, P. A.; Velikov, Yu. Kh. // Physics of the Solid State;Aug97, Vol. 39 Issue 8, p1228 

    Results are presented for the total energies calculated for oxygen and carbon impurities in silicon at T = 0 K. The equilibrium positions of these point defects are determined at low (10[sup -3] - 10[sup -2] at. %) concentrations.

  • Optical studies of Ge islanding on Si(111). Persans, P.D.; Deelman, P.W. // Applied Physics Letters;1/27/1997, Vol. 70 Issue 4, p472 

    Examines the optical properties of island layers resulting from molecular beam epitaxial deposition of Ge on Si(111) substrates. Determination of the strain and composition of the islands; Average Si impurity content in the islands and average in-plane strain; Decrease of both strain and Si...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics