Conductance Anisotropy of δ-Si Doped GaAs Layers Grown by Molecular Beam Epitaxy on (111)A GaAs Substrates and Misoriented in the [211] Direction

Galiev, G. B.; Mokerov, V. G.; Kul’bachinskiı, V. A.; Kytin, V. G.; Lunin, R. A.; Derkach, A. V.; Vasil’evskiı, I. S.
June 2002
Doklady Physics;Jun2002, Vol. 47 Issue 6, p419
Academic Journal
Focuses on the conductance anisotropy of silicon-doped gallium arsenide layers grown by molecular beam epitaxy on gallium arsenide substrates. Difference between the atomic radius tin and gallium; Schematic arrangements of gallium and arsenide atoms on the surface for misorientation of substrates.


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