ZnS and ZnSe microchip lasers emit continuous-wave infrared radiation

July 2002
Laser Focus World;Jul2002, Vol. 38 Issue 7, p11
Reports on the development of erbium-fiber-laser-pumped microchip lasers by researchers at the University of Alabama in Alabama and the Kuban State University in Krasnodar, Russia. Information on zinc sulfide- and zinc selenide-based microchip lasers; Temporal-mode structures of the lasers.


Related Articles

  • Epitaxial growth of ZnS grown at low temperatures by atmospheric pressure metalorganic vapor phase epitaxy. Yodo, Tokuo; Ueda, Kazuhiro; Morio, Kenji; Yamashita, Ken; Tanaka, Shuhei // Journal of Applied Physics;12/1/1990, Vol. 68 Issue 11, p5674 

    Presents a study which investigated the epitaxial growth of zinc sulfide (ZnS) grown at low temperatures by atmospheric pressure metalorganic vapor phase epitaxy. Properties of ZnS; Comparison of the difficulty in controlling the electrical properties of ZnS and zinc selenide (ZnSe); Growth...

  • Dependence of elastic strain on thickness for ZnSe films grown on lattice-mismatched materials. Yokogawa, Toshiya; Sato, Hisanao; Ogura, Mototsugu // Applied Physics Letters;5/16/1988, Vol. 52 Issue 20, p1678 

    We present a new approach for calculation of the dependence of elastic strain on layer thickness concerning ZnSe films grown on GaAs and on ZnS. The basic concept involved in our model is that the interfacial misfit dislocations are generated only when the areal strain energy density exceeds an...

  • ZnSe/ZnS heteroepitaxial growth using an intermediate strained-layer superlattice buffer. Yokogawa, Toshiya; Ogura, Mototsugu; Kajiwara, Takao // Journal of Applied Physics;10/1/1987, Vol. 62 Issue 7, p2843 

    Presents a study that examined zinc selenium (ZnSe) films grown in zinc sulfur (ZnS) layers with the intermediate strained-layer superlattices buffer by low-pressure metalorganic vapor-phase epitaxy. Information on the influence of large lattice mismatch; Investigation of the effect of the...

  • Carrier concentration enhancement of p-type and ZnS by codoping with active nitrogen and.... Jung, H.D.; Song, C.D. // Applied Physics Letters;3/3/1997, Vol. 70 Issue 9, p1143 

    Examines p-type doping of zinc selenide and zinc sulfide grown by molecular beam epitaxy using active nitrogen and tellurium. Limits for doping of zinc selenide; Description of shutter sequence for p-type zinc selenide; Analysis of photoluminescence spectra of zinc tellerium/zinc selenide.

  • Free-standing ZnSe/ZnS quantum wires with high luminescence efficiency. Rinaldi, R.; Turco, C. // Applied Physics Letters;12/29/1997, Vol. 71 Issue 26, p3770 

    Examines the efficiency of zinc selenide/zinc sulfide quantum wires in luminescence emission. Impact of lateral strain relaxation on ground level energy of the wires; Mechanism of the Stark effect in balancing the quantum size effect; Shifts in energy levels on varying luminescence and quantum...

  • The iodine donor in ZnSxSe1-x alloys. Fornell, J.-O.; Grimmeiss, H. G.; Mach, R.; Müller, G. // Journal of Applied Physics;12/1/1988, Vol. 64 Issue 11, p6322 

    Presents a study that investigated the energy position of an iodine-related donor in zinc-sulfide-selenide alloy system. Methodology; Measurement of the thermal and optical energies of the alloy; Examination of the temperature dependence of the capture cross section of iodine electrons.

  • Reactive ion beam etching of ZnSe and ZnS epitaxial films using Cl2 electron cyclotron resonance plasma. Saitoh, Tohru; Yokogawa, Toshiya; Narusawa, Tadashi // Applied Physics Letters;2/26/1990, Vol. 56 Issue 9, p839 

    Reactive ion beam etching of ZnSe and ZnS epitaxial films was carried out using pure Cl2 as an etching gas. Electron cyclotron resonance plasma was excited at pressures of 2.5×10-4 –2.5×10-3 Torr. Chlorine ions were extracted with voltages of 0–400 V. Sputtering yields were...

  • Biaxial splitting of optical phonon modes in ZnSe-Zns strained-layer superlattices. Yamamoto, Aishi; Yamada, Yoichi; Masumoto, Yasuaki // Applied Physics Letters;5/13/1991, Vol. 58 Issue 19, p2135 

    Reports on Raman scattering studies performed on ZnSe-ZnS strained-layer superlattices with the incident light parallel as well as perpendicular to the interface plane. Unstrained lattice constants of bulk ZnSe and ZnS; Parameters used in the calculation; Energy deviation of longitudinal...

  • Metalorganic molecular-beam epitaxy of ZnSe and ZnS. Ando, Hideyasu; Taike, Akira; Konagai, Makoto; Takahashi, Kiyoshi // Journal of Applied Physics;8/15/1987, Vol. 62 Issue 4, p1251 

    Demonstrates the metalorganic molecular-beam epitaxial growth of zinc selenide and zinc sulfide on gallium arsenide. Dependence of the growth rate on various growth conditions; Differences in growth kinetics and in crystallinity between H[sub2]S-based and diethylsulfide-based zinc sulfide;...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics