Photoluminescence of GaAs single quantum wells confined by short-period all-binary GaAs/AlAs superlattices

Fujiwara, Kenzo; Ploog, Klaus
December 1984
Applied Physics Letters;1984, Vol. 45 Issue 11, p1222
Academic Journal
GaAs single quantum well heterostructures (SQWH's) composed of all-binary AlAs/GaAs heterostructures by using AlAs/GaAs short-period superlattices (SPS) instead of the ternary alloy as cladding layers were grown by molecular beam epitaxy at low substrate temperature. Detailed photoluminescence measurements at 2 K reveal that these SPS confined SQWH's exhibit superior luminescence properties. They are therefore very attractive for application in new optoelectronic devices. The SPS configuration has a strong effect on the energy of the confined particle transition because of the fully interacting quantum well system.


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