Modulation doping in GexSi1-x/Si strained layer heterostructures

People, R.; Bean, J. C.; Lang, D. V.; Sergent, A. M.; Störmer, H. L.; Wecht, K. W.; Lynch, R. T.; Baldwin, K.
December 1984
Applied Physics Letters;1984, Vol. 45 Issue 11, p1231
Academic Journal
We report the first observation of the modulation doping effect in Si/Ge0.2Si0.8 heterojunctions grown by molecular beam epitaxy. Peak hole mobilities of ∼3300 cm2 V-1 s-1 have been observed at 4.2 K. These values, although nonoptimum, are comparable to the best reported values for holes in Si/SiO2 inversion layers. Low temperature, angular dependent, Shubnikov-de Haas measurements have demonstrated the two-dimensional nature of the hole gas and yield a surface carrier density of 3.5×1011 cm-2. From the temperature dependence of the Shubnikov-de Haas amplitudes a hole effective mass of 0.30±0.02mo has been derived. Identical measurements on n-type heterojunctions having the same Ge content (x=0.2) have failed to show a sustained enhancement of mobility at low temperatures, indicating that ΔEv>ΔEc.


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