TITLE

HgCdTe heterojunction contact photoconductor

AUTHOR(S)
Smith, D. L.; Arch, D. K.; Wood, R. A.; Scott, M. Walter
PUB. DATE
July 1984
SOURCE
Applied Physics Letters;1984, Vol. 45 Issue 1, p83
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A new photoconductor device structure is described utilizing a heterojunction contact which incorporates a higher band-gap HgCdTe alloy between the metal contact and the normal band-gap photoconductor. A theoretical treatment of the heterojunction contact photoconductor (HCP) device shows that carrier sweepout can be virtually eliminated; the calculations predict elimination of ''saturation'' of responsivity and a very large increase in responsivity. HCP devices were fabricated; experimental results verified the theory in several ways. A responsivity was measured at 80 K of about 450 000 V/W at 30 V/cm and over 1 500 000 V/W at 125 V/cm.
ACCESSION #
71380753

 

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