Photoemission studies of a-SixC1-x:H/a-Si and a-SixC1-x:H/ hydrogenated amorphous silicon heterojunctions

Evangelisti, F.; Fiorini, P.; Giovannella, C.; Patella, F.; Perfetti, P.; Quaresima, C.; Capozi, M.
April 1984
Applied Physics Letters;1984, Vol. 44 Issue 8, p764
Academic Journal
The interfaces between hydrogenated amorphous silicon-carbon alloy and amorphous silicon, both hydrogenated and not, were investigated by photoemission spectroscopy. It is found that the valence-band discontinuity is 0.15±0.1 eV for the amorphous Si case and zero within the experimental uncertainty for the hydrogenated amorphous Si. The relevance of this result for understanding the behavior of the p-i-n amorphous solar cells is discussed.


Related Articles

  • Effect of electrical doping on molecular level alignment at organic–organic heterojunctions. Gao, Weiying; Kahn, Antoine // Applied Physics Letters;6/30/2003, Vol. 82 Issue 26, p4815 

    The effect of electrical doping on the interface molecular level alignment at organic-organic (OO) heterojunctions is studied with ultraviolet photoemission spectroscopy. Interfaces between hole transport layers (HTL) and electron transport layers are investigated as a function of p doping of...

  • ([Square_Root]3×[Square_Root]3)B structure on a (5×5)GexSi1-x/Si (111) surface. Tatsumi, T.; Hirosawa, I.; Niino, T.; Hirayama, H.; Mizuki, J. // Applied Physics Letters;10/1/1990, Vol. 57 Issue 14, p1395 

    A ([Square_Root]3×[Square_Root]3)B structure was found to be formed on a (5×5) GexSi1-x/Si (111) surface on which Ga or Sn atoms did not form any superstructures. The critical B coverage at which a (7×7) pattern disappeared and only a ([Square_Root]3×[Square_Root]3) pattern was...

  • Photovoltaic characteristics of p-β-FeSi2(Al)/n-Si(100) heterojunction solar cells and the effects of interfacial engineering. Dalapati, G. K.; Liew, S. L.; Wong, A. S. W.; Chai, Y.; Chiam, S. Y.; Chi, D. Z. // Applied Physics Letters;1/3/2011, Vol. 98 Issue 1, p013507 

    Heterojunction solar cells with Al-alloyed polycrystalline p-type β-phase iron disilicide [p-β-FeSi2(Al)] on n-Si(100) were investigated. The p-β-FeSi2(Al) was grown by sputter deposition and rapid-thermal annealing. Photocurrent of ∼1.8 mA/cm2 and open-circuit voltage of ∼63...

  • Ag/PbTe(111) interface behavior studied by photoemission spectroscopy. Wu, H. F.; Zhang, H. J.; Lu, Y. H.; Si, J. X.; Li, H. Y.; Bao, S. N.; Wu, H. Z.; He, P. // Applied Physics Letters;3/24/2008, Vol. 92 Issue 12, p122112 

    We performed investigations on the formation of Ag/PbTe(111) interface by using photoemission spectroscopy. Upon initial Ag deposition, both Pb 4f and Te 3d core levels and the valence-band edge showed shifts to high binding energy, from which the band bending at Ag/PbTe(111) is determined to be...

  • Reverse rectification behavior of NiPc (p-type)/F16CuPc (n-type) heterojunction. Kumar, Arvind; Samanta, Soumen; Singh, Ajay; Debnath, A. K.; Prasad, R.; Aswal, D. K.; Gupta, S. K. // AIP Conference Proceedings;6/5/2012, Vol. 1447 Issue 1, p755 

    In this paper we present reverse rectification behavior of an organic heterojunction comprising of nickel phthalocyanine (NiPc) and copper-hexadecafluroro-phthalocyanine (F16CuPc) grown by MBE. Using Kelvin Probe we found that charge is accumulated at both side of interface, electrons in F16CuPc...

  • Photoemission studies of the hydrogenated silicon-gold interface. Lu, Z. H.; Sham, T. K.; Norton, P. R. // Applied Physics Letters;7/2/1990, Vol. 57 Issue 1, p37 

    The formation of the gold-silicon interface on c-Si(100) and hydrogen-passivated c-Si(100) has been studied by synchrotron radiation photoemission spectroscopy. The results show that the presence of Si-H on the surface (a) quenches the surface dangling bond states and (b) reduces the Au-Si...

  • Band discontinuities at epitaxial SrTiO[sub 3]/Si(001) heterojunctions. Chambers, S. A.; Chambers, S.A.; Liang, Y.; Yu, Z.; Droopad, R.; Ramdani, J.; Eisenbeiser, K. // Applied Physics Letters;9/11/2000, Vol. 77 Issue 11 

    We have used photoemission methods to directly measure the valence and conduction band offsets at SrTiO[sub 3]/Si(001) interfaces, as prepared by molecular-beam epitaxy. Within experimental error, the measured values are the same for growth on n- and p-Si, with the entire band discontinuity...

  • Characterization of oxide films on 4H-SiC epitaxial (0001) faces by high-energy-resolution photoemission spectroscopy: Comparison between wet and dry oxidation. Hijikata, Yasuto; Yaguchi, Hiroyuki; Yoshida, Sadafumi; Takata, Yasutaka; Kobayashi, Keisuke; Nohira, Hiroshi; Hattori, Takeo // Journal of Applied Physics;9/1/2006, Vol. 100 Issue 5, p053710 

    Wet and dry oxide films-4H-SiC epitaxial (0001) C-face interfaces have been characterized by capacitance-voltage (C-V) measurements and soft x-ray excited photoemission spectroscopy (SX-PES) and hard x-ray excited photoemission spectroscopy (HX-PES) using synchrotron radiation. The interface...

  • Band offsets and electronic structure of SiC/SiO2 interfaces. Afanas’ev, V. V.; Bassler, M.; Pensl, G.; Schulz, M. J.; Stein von Kamienski, E. // Journal of Applied Physics;3/15/1996, Vol. 79 Issue 6, p3108 

    Focuses on a study which examined the electronic structure of SiC/SiO2 interfaces for different SiC polytypes using internal photoemission of electrons from the semiconductor into the oxide. Experimental procedure; Results; Discussion; Conclusions.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics