TITLE

Ga0.47In0.53As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1.53 μm

AUTHOR(S)
Tsang, W. T.
PUB. DATE
February 1984
SOURCE
Applied Physics Letters;1984, Vol. 44 Issue 3, p288
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Current injection Ga0.47In0.53As/InP multiquantum well heterostructure lasers operating at 1.53 μm have been successfully prepared by molecular beam epitaxy. These lasers consist of four ∼70 Å Ga0.47In0.53As wells and three ∼150 Å InP barriers. The threshold current density is 2.7 kA/cm2. In the temperature range of 10-75 °C, the threshold-temperature dependence can be described closely by a single temperature dependence coefficient T0. The measured T0 is 45 K. No significant improvement in T0 is observed in these multiquantum well lasers over conventional double-heterostructure lasers operating also at 1.5 μm.
ACCESSION #
71379995

 

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