TITLE

Low-Temperature Epitaxy of Compressively Strained Silicon Directly on Silicon Substrates

AUTHOR(S)
Shahrjerdi, D.; Hekmatshoar, B.; Bedell, S.; Hopstaken, M.; Sadana, D.
PUB. DATE
March 2012
SOURCE
Journal of Electronic Materials;Mar2012, Vol. 41 Issue 3, p494
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report epitaxial growth of compressively strained silicon directly on (100) silicon substrates by plasma-enhanced chemical vapor deposition. The silicon epitaxy was performed in a silane and hydrogen gas mixture at temperatures as low as 150°C. We investigate the effect of hydrogen dilution during the silicon epitaxy on the strain level by high-resolution x-ray diffraction. Additionally, triple-axis x-ray reciprocal-space mapping of the samples indicates that (i) the epitaxial layers are fully strained and (ii) the strain is graded. Secondary-ion mass spectrometry depth profiling reveals the correlation between the strain gradient and the hydrogen concentration profile within the epitaxial layers. Furthermore, heavily phosphorus-doped layers with an electrically active doping concentration of ~2 × 10 cm were obtained at such low growth temperatures.
ACCESSION #
70842534

 

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