TITLE

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

AUTHOR(S)
Higashiwaki, Masataka; Sasaki, Kohei; Kuramata, Akito; Masui, Takekazu; Yamakoshi, Shigenobu
PUB. DATE
January 2012
SOURCE
Applied Physics Letters;1/2/2012, Vol. 100 Issue 1, p013504
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report a demonstration of single-crystal gallium oxide (Ga2O3) metal-semiconductor field-effect transistors (MESFETs). A Sn-doped Ga2O3 layer was grown on a semi-insulating β-Ga2O3 (010) substrate by molecular-beam epitaxy. We fabricated a circular MESFET with a gate length of 4 μm and a source-drain spacing of 20 μm. The device showed an ideal transistor action represented by the drain current modulation due to the gate voltage (VGS) swing. A complete drain current pinch-off characteristic was also obtained for VGS < -20 V, and the three-terminal off-state breakdown voltage was over 250 V. A low drain leakage current of 3 μA at the off-state led to a high on/off drain current ratio of about 10 000. These device characteristics obtained at the early stage indicate the great potential of Ga2O3-based electrical devices for future power device applications.
ACCESSION #
70166405

 

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