Growth of Cu2ZnSnS4 Films by Sputtering with Post-Sulfurization

Yoo, Hyesun; Kim, JunHo
December 2011
AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p157
Academic Journal
We have fabricated Cu2ZnSnS4 films by sputtering of stacked Cu/Sn/Cu/Zn films and subsequent sulfurizations. The sulfurizations were carried out at different temperatures, i.e., 520 °C (CZTS_L film) and 570 °C (CZTS_H film). The CZTS_L film showed impurity phase, SnS2, in X-ray diffraction (XRD) result and a lower optical band gap, ∼1.3 eV. Further, in CZTS_L film localized highly Zn-rich and Zn-rich phases were observed. For the CZTS_H film, no segregated impurity phase was observed in XRD result, but Sn-poor phases were observed all over the film surface. The optical band gap of CZTS_H film was observed to be ∼1.4 eV.


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