TITLE

Experimental Verification of the Mott Relation in the Thermoelectric Effect of the Quantum Hall Systems

AUTHOR(S)
Fujita, K.; Endo, A.; Katsumoto, S.; Iye, Y.
PUB. DATE
December 2011
SOURCE
AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p623
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have measured the diffusion thermoelectric power in a two-dimensional electron gas in a GaAs/AlGaAs heterostructure by employing the current heating technique at a low temperature (T = 40 mK) in the magnetic field range 0
ACCESSION #
70099547

 

Related Articles

  • Excited States of Spins and Pseudospins in the ν = 2/3 Bilayer Quantum Hall Systems. Zheng, Y. D.; Morikawa, T.; Fukuda, A.; Tsuda, S.; Arai, T.; Ezawa, Z. F.; Sawada, A. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p635 

    We study excited states and excitation energies of the spins and pseudospins in different phases of the ν = 2/3 bilayer quantum Hall states using a GaAs/AlGaAs heterostructure sample. The phase boundaries are determined by the magnetoresistance measurements. The thermal activation energies at...

  • Capacitance spectroscopy investigation of the spin polarization of two-dimensional electronic systems. Dorozhkin, S. I.; Dorokhova, M. O.; Haug, R. J.; Ploog, K. // JETP Letters;1/10/97, Vol. 65 Issue 1, p108 

    It is shown that capacitance spectroscopy can be used to investigate the spin polarization of two-dimensional electronic systems (2DESs). We employed this method to investigate the spin polarization of 2DESs in a GaAs/AlGaAs heterojunction for filling factors of the magnetic-quantization levels...

  • Corrections to the Drude conductivity and Hall resistivity caused by electron interaction and ‘memory’ effects in the presence of mixed disorder. Galaktionov, E. A.; Savchenko, A. K.; Ritchie, D. A. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p593 

    In this work we have studied the corrections to the Drude conductivity and Hall constant of a high-mobility 2D electron gas in a GaAs/AlGaAs heterostructure caused by the electron-electron interaction in the presence of mixed disorder. A temperature-dependent, parabolic, negative...

  • Ultra-shallow undoped 2DEGs in GaAs-AlGaAs heterostructures. Gupta, K. Das; Mak, W. Y.; Sfigakis, F.; Beere, H. E.; Farrer, I.; Ritchie, D. A. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p333 

    We have developed a method of fabricating very shallow, gateable, undoped 2-dimensional electron gases (2DEG) and making very low resistivity contacts to these. We studied the evolution of mobility as a function of the depth of the 2DEG (from 300 nm to 30 nm). We extract quantitative information...

  • Single heterostructures for optical transport experiments. Höpfel, R. A.; Shah, J.; Chang, T. Y.; Sauer, N. J. // Applied Physics Letters;11/30/1987, Vol. 51 Issue 22, p1815 

    We introduce a new GaAs/AlxGa1-xAs single heterostructure, which allows local optical injection of a one-component confined plasma. The heterojunction is placed in the undoped region of a p-i-n structure, which provides a high built-in electric field for the separation of injected electrons and...

  • Influence of defects on the temperature dependence of the density of electrons in the two-dimensional and doped channels of selectively doped Al[sub x]Ga[sub 1-x]As/GaAs heterostructures. Dmitriev, S. G.; Spiridonov, K. I. // Technical Physics;Oct98, Vol. 43 Issue 10, p1266 

    The densities of electrons in the two-dimensional and doped channels of selectively doped AlGaAs/GaAs heterostructures are calculated. It is shown that traps and surface states in the AlGaAs layer can change the sign of the temperature dependence of the electron density in the two-dimensional...

  • Γ- and X-state influences on resonant tunneling current in single- and double-barrier GaAs/AlAs structures. Rousseau, Kenneth V.; Wang, K. L.; Schulman, J. N. // Applied Physics Letters;4/3/1989, Vol. 54 Issue 14, p1341 

    We have calculated the resonant tunneling current of electrons in single- and double-barrier GaAs-AlAs heterostructures in the (001) direction. A ten-band empirical tight-binding model is used in which the wave function is propagated through the structure from atom to atom using transfer...

  • Electronic State Mixing in X[sub x] and X[sub y] Valleys in AlAs/GaAs (001). Karavaev, G. F.; Chernyshov, V. N. // Semiconductors;Jul2001, Vol. 35 Issue 7, p807 

    The X[sub x] - X[sub y] mixing of X-valley electronic states in AlAs/GaAs(001) heterostructures is analyzed. General, structure symmetry-related constraints on the parameters of a matrix matching the envelopes are derived. A model describing the X[sub x] - X[sub y] mixing is proposed. The...

  • Absorption and emission of far-IR radiation by hot holes in GaAs/AlGaAs quantum wells. Vorob’ev, L. E.; Donetskii, D. V.; Golub, L. E. // JETP Letters;6/25/96, Vol. 63 Issue 12, p977 

    It is found that when holes in GaAs/Al0.5Ga0.5As quantum wells are heated by a longitudinal electric field, the absorption in the far-IR region of the spectrum changes. The spontaneous emission spectrum in the far-IR range is measured. It is shown that the absorption and emission are due to...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics